IEICE TRANSACTIONS on Electronics
A New Packaging Technology for GaAs MMIC Modules
Summary :
A new impedance matched film carrier is developed to package uniplanar MMICs. The carrier has an insulating polyimide film on which RF, DC bias, and ground conductive areas are formed. The areas extend into bonding windows, which are etched in the polyimide film, and the extended portions form inner and outer leads. The interconnection of the inner and outer leads to MMIC-electrode pads is highly reliable because of the gold-plated bumps formed at the distal ends of the inner and outer leads. This carrier has an insertion loss of less than 0.2 dB/mm without resonance over the frequency range from DC to 30 GHz. The electrical performance of the GaAs MMIC module with this carrier is almost equal to that of the MMIC measured directly on-wafer.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.5 pp.1209-1213
- Publication Date
- 1991/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on the 3rd Asia-Pacific Microwave Conference)
- Category
- Active Devices and Circuits
Authors
Keyword
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Hisashi TOMIMURO, Fuminori ISHITSUKA, Nobuo SATO, Masahiro MURAGUCHI, "A New Packaging Technology for GaAs MMIC Modules" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 5, pp. 1209-1213, May 1991, doi: .
Abstract: A new impedance matched film carrier is developed to package uniplanar MMICs. The carrier has an insulating polyimide film on which RF, DC bias, and ground conductive areas are formed. The areas extend into bonding windows, which are etched in the polyimide film, and the extended portions form inner and outer leads. The interconnection of the inner and outer leads to MMIC-electrode pads is highly reliable because of the gold-plated bumps formed at the distal ends of the inner and outer leads. This carrier has an insertion loss of less than 0.2 dB/mm without resonance over the frequency range from DC to 30 GHz. The electrical performance of the GaAs MMIC module with this carrier is almost equal to that of the MMIC measured directly on-wafer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_5_1209/_p
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@ARTICLE{e74-c_5_1209,
author={Hisashi TOMIMURO, Fuminori ISHITSUKA, Nobuo SATO, Masahiro MURAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Packaging Technology for GaAs MMIC Modules},
year={1991},
volume={E74-C},
number={5},
pages={1209-1213},
abstract={A new impedance matched film carrier is developed to package uniplanar MMICs. The carrier has an insulating polyimide film on which RF, DC bias, and ground conductive areas are formed. The areas extend into bonding windows, which are etched in the polyimide film, and the extended portions form inner and outer leads. The interconnection of the inner and outer leads to MMIC-electrode pads is highly reliable because of the gold-plated bumps formed at the distal ends of the inner and outer leads. This carrier has an insertion loss of less than 0.2 dB/mm without resonance over the frequency range from DC to 30 GHz. The electrical performance of the GaAs MMIC module with this carrier is almost equal to that of the MMIC measured directly on-wafer.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - A New Packaging Technology for GaAs MMIC Modules
T2 - IEICE TRANSACTIONS on Electronics
SP - 1209
EP - 1213
AU - Hisashi TOMIMURO
AU - Fuminori ISHITSUKA
AU - Nobuo SATO
AU - Masahiro MURAGUCHI
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1991
AB - A new impedance matched film carrier is developed to package uniplanar MMICs. The carrier has an insulating polyimide film on which RF, DC bias, and ground conductive areas are formed. The areas extend into bonding windows, which are etched in the polyimide film, and the extended portions form inner and outer leads. The interconnection of the inner and outer leads to MMIC-electrode pads is highly reliable because of the gold-plated bumps formed at the distal ends of the inner and outer leads. This carrier has an insertion loss of less than 0.2 dB/mm without resonance over the frequency range from DC to 30 GHz. The electrical performance of the GaAs MMIC module with this carrier is almost equal to that of the MMIC measured directly on-wafer.
ER -
English
