IEICE TRANSACTIONS on Electronics
Emitter-Resistance Effect on Cutoff Frequency of Widegap-Emitter Si HBTs
Summary :
This paper dicusses the emitter-resistance (RE) effect on the cutoff frequency (fT) of silicon heteroemitter bipolar transistors (Si HBTs) by using two-dimensional device simulation, circuit simulation and small-signal analysis. It is shown that an approximate formula fT=fT0/(1+2πfT0RECC) agrees well with the device and circuit simulation results. The emitter resistance affects the cutoff frequency greatly. The conductance modulation in lightly-doped heteroemitter layers with a heavily-doped backup layer is also analyzed. It is found that the carrier injection from the heavily-doped backup layer into the lightly-doped heteroemitter layer reduces the emitter resistance to one-fourth the value at best. The permissible lower limit of electron mobility in heteroemitter is estimated roughly to be 2 cm2v-1s-1.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.6 pp.1609-1614
- Publication Date
- 1991/06/25
- Publicized
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- Type of Manuscript
- Special Section PAPER (Special Issue on Device and Process Simulation for Ultra Large Scale Integration)
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Mamoru UGAJIN, Yoshihito AMEMIYA, "Emitter-Resistance Effect on Cutoff Frequency of Widegap-Emitter Si HBTs" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 6, pp. 1609-1614, June 1991, doi: .
Abstract: This paper dicusses the emitter-resistance (RE) effect on the cutoff frequency (fT) of silicon heteroemitter bipolar transistors (Si HBTs) by using two-dimensional device simulation, circuit simulation and small-signal analysis. It is shown that an approximate formula fT=fT0/(1+2πfT0RECC) agrees well with the device and circuit simulation results. The emitter resistance affects the cutoff frequency greatly. The conductance modulation in lightly-doped heteroemitter layers with a heavily-doped backup layer is also analyzed. It is found that the carrier injection from the heavily-doped backup layer into the lightly-doped heteroemitter layer reduces the emitter resistance to one-fourth the value at best. The permissible lower limit of electron mobility in heteroemitter is estimated roughly to be 2 cm2v-1s-1.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_6_1609/_p
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@ARTICLE{e74-c_6_1609,
author={Mamoru UGAJIN, Yoshihito AMEMIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Emitter-Resistance Effect on Cutoff Frequency of Widegap-Emitter Si HBTs},
year={1991},
volume={E74-C},
number={6},
pages={1609-1614},
abstract={This paper dicusses the emitter-resistance (RE) effect on the cutoff frequency (fT) of silicon heteroemitter bipolar transistors (Si HBTs) by using two-dimensional device simulation, circuit simulation and small-signal analysis. It is shown that an approximate formula fT=fT0/(1+2πfT0RECC) agrees well with the device and circuit simulation results. The emitter resistance affects the cutoff frequency greatly. The conductance modulation in lightly-doped heteroemitter layers with a heavily-doped backup layer is also analyzed. It is found that the carrier injection from the heavily-doped backup layer into the lightly-doped heteroemitter layer reduces the emitter resistance to one-fourth the value at best. The permissible lower limit of electron mobility in heteroemitter is estimated roughly to be 2 cm2v-1s-1.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Emitter-Resistance Effect on Cutoff Frequency of Widegap-Emitter Si HBTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1609
EP - 1614
AU - Mamoru UGAJIN
AU - Yoshihito AMEMIYA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1991
AB - This paper dicusses the emitter-resistance (RE) effect on the cutoff frequency (fT) of silicon heteroemitter bipolar transistors (Si HBTs) by using two-dimensional device simulation, circuit simulation and small-signal analysis. It is shown that an approximate formula fT=fT0/(1+2πfT0RECC) agrees well with the device and circuit simulation results. The emitter resistance affects the cutoff frequency greatly. The conductance modulation in lightly-doped heteroemitter layers with a heavily-doped backup layer is also analyzed. It is found that the carrier injection from the heavily-doped backup layer into the lightly-doped heteroemitter layer reduces the emitter resistance to one-fourth the value at best. The permissible lower limit of electron mobility in heteroemitter is estimated roughly to be 2 cm2v-1s-1.
ER -
English
