IEICE TRANSACTIONS on Electronics
Characteristics of All-Nb Thin Film Microbridges Fabricated by Nanometer Process
Summary :
We have fabricated all-Nb thin film microbridges by nanometer process using new resist developed by us, electron beam lithography (EBL) and reactive ion etching (RIE) using CBrF3 gas. The resistance against CBrF3 plasma of this EB resist is 4-10 times as strong as poly-(methyl methacrylate) PMMA. The merit of RIE using CBrF3 gas is an anisotropic etching and high selectivity about resist and target. Trench of about 20 nm width was fabricated. Using this technique, the bridge with 40 nm length and 50 nm width was fabricated, and the thickness of bridge was 100 nm. The capacitance of the junction was estimated as 0.004 pF. Because of this small capacitance, fabricated samples are suitable for detection of submillimeter wave. The critical current Ic (T) of fabricated samples was proportional to (1
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.7 pp.2015-2019
- Publication Date
- 1991/07/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Low Temperature Electronics)
- Category
Authors
Yoshinori UZAWA
Nobumitsu HIROSE
Yuichi HARADA
Motoaki SANO
Matsuo SEKINE
Kazuo YAMAGUCHI
Hiroyuki OZAKI
Akira HIRAO
Shigeru YOSHIMORI
Mitsuo KAWAMURA
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Yoshinori UZAWA, Nobumitsu HIROSE, Yuichi HARADA, Motoaki SANO, Matsuo SEKINE, Kazuo YAMAGUCHI, Hiroyuki OZAKI, Akira HIRAO, Shigeru YOSHIMORI, Mitsuo KAWAMURA, "Characteristics of All-Nb Thin Film Microbridges Fabricated by Nanometer Process" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 7, pp. 2015-2019, July 1991, doi: .
Abstract: We have fabricated all-Nb thin film microbridges by nanometer process using new resist developed by us, electron beam lithography (EBL) and reactive ion etching (RIE) using CBrF3 gas. The resistance against CBrF3 plasma of this EB resist is 4-10 times as strong as poly-(methyl methacrylate) PMMA. The merit of RIE using CBrF3 gas is an anisotropic etching and high selectivity about resist and target. Trench of about 20 nm width was fabricated. Using this technique, the bridge with 40 nm length and 50 nm width was fabricated, and the thickness of bridge was 100 nm. The capacitance of the junction was estimated as 0.004 pF. Because of this small capacitance, fabricated samples are suitable for detection of submillimeter wave. The critical current Ic (T) of fabricated samples was proportional to (1
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_7_2015/_p
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@ARTICLE{e74-c_7_2015,
author={Yoshinori UZAWA, Nobumitsu HIROSE, Yuichi HARADA, Motoaki SANO, Matsuo SEKINE, Kazuo YAMAGUCHI, Hiroyuki OZAKI, Akira HIRAO, Shigeru YOSHIMORI, Mitsuo KAWAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characteristics of All-Nb Thin Film Microbridges Fabricated by Nanometer Process},
year={1991},
volume={E74-C},
number={7},
pages={2015-2019},
abstract={We have fabricated all-Nb thin film microbridges by nanometer process using new resist developed by us, electron beam lithography (EBL) and reactive ion etching (RIE) using CBrF3 gas. The resistance against CBrF3 plasma of this EB resist is 4-10 times as strong as poly-(methyl methacrylate) PMMA. The merit of RIE using CBrF3 gas is an anisotropic etching and high selectivity about resist and target. Trench of about 20 nm width was fabricated. Using this technique, the bridge with 40 nm length and 50 nm width was fabricated, and the thickness of bridge was 100 nm. The capacitance of the junction was estimated as 0.004 pF. Because of this small capacitance, fabricated samples are suitable for detection of submillimeter wave. The critical current Ic (T) of fabricated samples was proportional to (1
keywords={},
doi={},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - Characteristics of All-Nb Thin Film Microbridges Fabricated by Nanometer Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 2015
EP - 2019
AU - Yoshinori UZAWA
AU - Nobumitsu HIROSE
AU - Yuichi HARADA
AU - Motoaki SANO
AU - Matsuo SEKINE
AU - Kazuo YAMAGUCHI
AU - Hiroyuki OZAKI
AU - Akira HIRAO
AU - Shigeru YOSHIMORI
AU - Mitsuo KAWAMURA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1991
AB - We have fabricated all-Nb thin film microbridges by nanometer process using new resist developed by us, electron beam lithography (EBL) and reactive ion etching (RIE) using CBrF3 gas. The resistance against CBrF3 plasma of this EB resist is 4-10 times as strong as poly-(methyl methacrylate) PMMA. The merit of RIE using CBrF3 gas is an anisotropic etching and high selectivity about resist and target. Trench of about 20 nm width was fabricated. Using this technique, the bridge with 40 nm length and 50 nm width was fabricated, and the thickness of bridge was 100 nm. The capacitance of the junction was estimated as 0.004 pF. Because of this small capacitance, fabricated samples are suitable for detection of submillimeter wave. The critical current Ic (T) of fabricated samples was proportional to (1
ER -
English
