A quasi-optical Superconductor-Insulator-Superconductor (SIS) mixer has been designed and tested in the 270-GHz band. The mixer used a substrate-lens-coupled log-periodic antenna and a tuning circuit for RF matching. The antenna is planar and self-complementary, and has a frequency-independent impedance of around 114 Ω over several octaves. The tuning circuit consists of two Nb/AIOx/Nb tunnel junctions separated by inductance for tuning out the junction capacitances and a λ/4 impedance transformer for matching the resistance of the two-junction circuit to the antenna impedance. The IF output from the mixer is brought out in a balanced method at each edge of the antenna, and is coupled to a low noise amplifier through a balun transformer using a 180-degree hybrid coupler for broadband IF matching. Double sideband receiver noise temperatures, determined from experimental Y-factor measurements, are about 150 K across the majority of the desired operating frequency band. The minimum receiver noise temperature of 120 K was measured at 263 GHz, which is as low as that of waveguide receivers. At this frequency, measurement of the noise contribution to the receiver results in input losses of 90 K, mixer noise of 17 K, and multiplied IF noise of 13 K. We found that the major sources of noise in our quasi-optical receiver were the optical losses.

We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for application as submillimeter wave SIS mixers. A ultra-high current density up to 120 kA/cm2, roughly two orders of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions. The magnetic field dependence and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behaviour of critical supercurrents in the high-Jc junctions. We have developed a low-noise quasi-optical SIS mixer with the high-current density NbN/AlN/NbN junctions and two-junction tuning circuits which employ Al/SiO/NbN microstriplines. The tuning characteristics of the mixer were investigated by measuring the response in the direct detection mode by using the Fourier Transform Spectrometer (FTS) and measuring the response in the heterodyne detection mode with the standard Y-factor method at frequencies from 670 to 1082 GHz. An uncorrected double sideband receiver noise temperature of 457 K (12hν/kB) was obtained at 783 GHz.

This paper describes the development of superconductor-insulator-superconductor (SIS) mixers for the Atacama Large Millimeter/submillimeter Array (ALMA) from the device point of view. During the construction phase of ALMA, the National Astronomical Observatory of Japan (NAOJ) successfully fabricated SIS mixers to meet the stringent ALMA noise temperature requirements of less than 230 K (5 times the quantum noise) for Band 10 (787-950 GHz) in collaboration with the National Institute of Information and Communications Technology. Band 10 covers the highest frequency band of ALMA and is recognized as the most difficult band in terms of superconducting technology. After the construction, the NAOJ began development studies for ALMA enhancement such as wideband and multibeam SIS mixers according to top-level science requirements, which are also presented.

This paper describes the first experimental results for a waveguide-type all-NbN superconductor-insulator-superconductor (SIS) heterodyne mixer on an MgO substrate designed to operate over the gap frequency of Nb. The mixer consists of an NbN/MgO/NbN junction, which has a length of one wavelength at 880 GHz as a tuning circuit, an NbN/MgO/NbN microstrip as a λ/4 impedance transformer, and an RF choke filter. The mixer chip was designed using a high-frequency-structure simulator. Its return-loss and embedding-impedance characteristics were examined using a 180-times-scaled mixer model. By optimizing the cutting and polishing processes for the MgO substrate, we were able to fabricate the mixer chip with an accuracy of less than 5 µm. We succeeded in mounting the chip on a mixer block and in estimating the receiver noise temperature. The uncorrected minimum double-sideband receiver noise temperature was 740 K at 824 GHz. A comparison of the receiver noise temperature in a quasi-optical SIS mixer fabricated on the same wafer as the waveguide mixer showed that input noise was the major contributor to receiver noise in the waveguide mixer.

We report on progress in the development of high-current-density all-NbN tunnel junctions for application as submillimeter wave SIS mixers. A very high current density up to 54 kA/cm2, roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with a thin aluminum nitride (AIN) tunnel barrier. Even though the junctions have a very high current density, they showed high-quality junction characteristics with a large gap voltage, sharp quasipartical current rise, and small subgap leakage current. The junctions also exhibited good Josephson tunneling behavior, excellent terahertz response, and sensitive heterodyne mixing properties. NbN/AIN/NbN tunnel junctions were integrated with a NbN thin-film antenna to investigate the terahertz responses and the heterodyne mixing properties in a quasioptical mixer testing system. Photon-assisted tunneling steps were clearly observed on the I-V curve with irradiation up to 1 THz, and low-noise heterodyne mixing was demonstrated in the 300-GHz band.

We have fabricated all-Nb thin film microbridges by nanometer process using new resist developed by us, electron beam lithography (EBL) and reactive ion etching (RIE) using CBrF3 gas. The resistance against CBrF3 plasma of this EB resist is 4-10 times as strong as poly-(methyl methacrylate) PMMA. The merit of RIE using CBrF3 gas is an anisotropic etching and high selectivity about resist and target. Trench of about 20 nm width was fabricated. Using this technique, the bridge with 40 nm length and 50 nm width was fabricated, and the thickness of bridge was 100 nm. The capacitance of the junction was estimated as 0.004 pF. Because of this small capacitance, fabricated samples are suitable for detection of submillimeter wave. The critical current Ic (T) of fabricated samples was proportional to (1T/Tc)3/2 like variable thickness bridge (VTB). Moreover, Shapiro step up to the 11th under the millimeter wave radiation (70 GHz) was observed.