Packaging Technology for HEMT LSI Devices Operated in Liquid Nitrogen

Shigenori AOKI; Yoshihiko IMANAKA; Kishio YOKOUCHI; Nobuo KAMEHARA

Packaging Technology for HEMT LSI Devices Operated in Liquid Nitrogen

Shigenori AOKI, Yoshihiko IMANAKA, Kishio YOKOUCHI, Nobuo KAMEHARA

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We developed a random number generator consisting of twenty of HEMT chips which are flip-chip-bonded to a multilayer ceramic substrate with copper conductors. The thermal expansion is closely adjusted to that of GaAs from room to liquid nitrogen temperatures. The chip size are 5.0 to 8.2 mm square. Indium solder bumps were applied for bonding. The substrate size is 120 mm square and 4 mm thick. It has 16 thick-film layers at inner substrate and 2 thin-film layers on both polished outer-surfaces. The electric properties of the module were evaluated during operation in liquid nitrogen. The module stably generated random numbers at clock cycles as short as 1.49 ns in liquid nitrogen. Tests confirmed the higher switching speed of the HEMT at 77 K and also the high performance of the packaging where the substrate was composed of both a glass and an alumina-treated-zirconia powder (GAZ). The thermal expansion is closely adjusted to GaAs by the fine controlling of the glass to alumina-treated-zirconia powder ratio. Thermal shock tests from 300 K to 77 K were performed for the specimen of GAZ, alumina and fused silica. On the each of them, GaAs chips (5050.6 mm) were flip-chip-bonded with indium solder. The failure rate of the bondings increased related to the thermal-expansion difference between GaAs and the substrates (ΔTE) from 300 K to 77 K. Experimental results also indicated that the powder-ratio controlled GAZ is the more suitable for HEMT packaging as for the reliability of its bondings.

Publication: IEICE TRANSACTIONS on Electronics Vol.E74-C No.8 pp.2317-2322

Publication Date: 1991/08/25

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Type of Manuscript: Special Section PAPER (Special Issue on Advanced Packaging Technology for Microelectronics Manufacturing)

Category: Multi Chip Module

Authors

Shigenori AOKI
Yoshihiko IMANAKA
Kishio YOKOUCHI
Nobuo KAMEHARA

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Shigenori AOKI, Yoshihiko IMANAKA, Kishio YOKOUCHI, Nobuo KAMEHARA, "Packaging Technology for HEMT LSI Devices Operated in Liquid Nitrogen" in IEICE TRANSACTIONS on Electronics, vol. E74-C, no. 8, pp. 2317-2322, August 1991, doi: .
Abstract: We developed a random number generator consisting of twenty of HEMT chips which are flip-chip-bonded to a multilayer ceramic substrate with copper conductors. The thermal expansion is closely adjusted to that of GaAs from room to liquid nitrogen temperatures. The chip size are 5.0 to 8.2 mm square. Indium solder bumps were applied for bonding. The substrate size is 120 mm square and 4 mm thick. It has 16 thick-film layers at inner substrate and 2 thin-film layers on both polished outer-surfaces. The electric properties of the module were evaluated during operation in liquid nitrogen. The module stably generated random numbers at clock cycles as short as 1.49 ns in liquid nitrogen. Tests confirmed the higher switching speed of the HEMT at 77 K and also the high performance of the packaging where the substrate was composed of both a glass and an alumina-treated-zirconia powder (GAZ). The thermal expansion is closely adjusted to GaAs by the fine controlling of the glass to alumina-treated-zirconia powder ratio. Thermal shock tests from 300 K to 77 K were performed for the specimen of GAZ, alumina and fused silica. On the each of them, GaAs chips (5050.6 mm) were flip-chip-bonded with indium solder. The failure rate of the bondings increased related to the thermal-expansion difference between GaAs and the substrates (ΔTE) from 300 K to 77 K. Experimental results also indicated that the powder-ratio controlled GAZ is the more suitable for HEMT packaging as for the reliability of its bondings.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_8_2317/_p

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@ARTICLE{e74-c_8_2317,
author={Shigenori AOKI, Yoshihiko IMANAKA, Kishio YOKOUCHI, Nobuo KAMEHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Packaging Technology for HEMT LSI Devices Operated in Liquid Nitrogen},
year={1991},
volume={E74-C},
number={8},
pages={2317-2322},
abstract={We developed a random number generator consisting of twenty of HEMT chips which are flip-chip-bonded to a multilayer ceramic substrate with copper conductors. The thermal expansion is closely adjusted to that of GaAs from room to liquid nitrogen temperatures. The chip size are 5.0 to 8.2 mm square. Indium solder bumps were applied for bonding. The substrate size is 120 mm square and 4 mm thick. It has 16 thick-film layers at inner substrate and 2 thin-film layers on both polished outer-surfaces. The electric properties of the module were evaluated during operation in liquid nitrogen. The module stably generated random numbers at clock cycles as short as 1.49 ns in liquid nitrogen. Tests confirmed the higher switching speed of the HEMT at 77 K and also the high performance of the packaging where the substrate was composed of both a glass and an alumina-treated-zirconia powder (GAZ). The thermal expansion is closely adjusted to GaAs by the fine controlling of the glass to alumina-treated-zirconia powder ratio. Thermal shock tests from 300 K to 77 K were performed for the specimen of GAZ, alumina and fused silica. On the each of them, GaAs chips (5050.6 mm) were flip-chip-bonded with indium solder. The failure rate of the bondings increased related to the thermal-expansion difference between GaAs and the substrates (ΔTE) from 300 K to 77 K. Experimental results also indicated that the powder-ratio controlled GAZ is the more suitable for HEMT packaging as for the reliability of its bondings.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Packaging Technology for HEMT LSI Devices Operated in Liquid Nitrogen
T2 - IEICE TRANSACTIONS on Electronics
SP - 2317
EP - 2322
AU - Shigenori AOKI
AU - Yoshihiko IMANAKA
AU - Kishio YOKOUCHI
AU - Nobuo KAMEHARA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1991
AB - We developed a random number generator consisting of twenty of HEMT chips which are flip-chip-bonded to a multilayer ceramic substrate with copper conductors. The thermal expansion is closely adjusted to that of GaAs from room to liquid nitrogen temperatures. The chip size are 5.0 to 8.2 mm square. Indium solder bumps were applied for bonding. The substrate size is 120 mm square and 4 mm thick. It has 16 thick-film layers at inner substrate and 2 thin-film layers on both polished outer-surfaces. The electric properties of the module were evaluated during operation in liquid nitrogen. The module stably generated random numbers at clock cycles as short as 1.49 ns in liquid nitrogen. Tests confirmed the higher switching speed of the HEMT at 77 K and also the high performance of the packaging where the substrate was composed of both a glass and an alumina-treated-zirconia powder (GAZ). The thermal expansion is closely adjusted to GaAs by the fine controlling of the glass to alumina-treated-zirconia powder ratio. Thermal shock tests from 300 K to 77 K were performed for the specimen of GAZ, alumina and fused silica. On the each of them, GaAs chips (5050.6 mm) were flip-chip-bonded with indium solder. The failure rate of the bondings increased related to the thermal-expansion difference between GaAs and the substrates (ΔTE) from 300 K to 77 K. Experimental results also indicated that the powder-ratio controlled GAZ is the more suitable for HEMT packaging as for the reliability of its bondings.
ER -