A New Multilayer Ceramic-Frame Package for High-Frequency MMIC Modules
Summary :
This paper presents a new ceramic package for high-frequency MMIC modules. The package is formed from a multilayer ceramic frame whose layers are metallized over most of both sides and co-fired. The inside and outside of the frame are metallized, except around the RF and DC terminals. This new package structure can eliminate ring resonances that occur in conventional ceramic packages and can provide high I/O isolation over a wide frequency range. The RF terminal is formed from microstrip lines and a through-wall microstrip designed to have a 50-ohm impedance. The insertion loss of each RF terminal is less than 0.5 dB up to 33 GHz, with complementary I/O isolation in excess of 30 dB. The new package also provides the low input V.S.W.R. of 1.3 : 1. A 30-GHz-band MMIC module incorporating four GaAs MMIC amplifiers is demonstrated. This module's maximum gain is 19 dB, and its input V.S.W.R. is 1.5 : 1 from 30.5 to 32.5 GHz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.8 pp.2344-2348
- Publication Date
- 1991/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Advanced Packaging Technology for Microelectronics Manufacturing)
- Category
- Interconnection
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Keyword
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Fuminori ISHITSUKA, Nobuo SATO, Haruhiko KATO, "A New Multilayer Ceramic-Frame Package for High-Frequency MMIC Modules" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 8, pp. 2344-2348, August 1991, doi: .
Abstract: This paper presents a new ceramic package for high-frequency MMIC modules. The package is formed from a multilayer ceramic frame whose layers are metallized over most of both sides and co-fired. The inside and outside of the frame are metallized, except around the RF and DC terminals. This new package structure can eliminate ring resonances that occur in conventional ceramic packages and can provide high I/O isolation over a wide frequency range. The RF terminal is formed from microstrip lines and a through-wall microstrip designed to have a 50-ohm impedance. The insertion loss of each RF terminal is less than 0.5 dB up to 33 GHz, with complementary I/O isolation in excess of 30 dB. The new package also provides the low input V.S.W.R. of 1.3 : 1. A 30-GHz-band MMIC module incorporating four GaAs MMIC amplifiers is demonstrated. This module's maximum gain is 19 dB, and its input V.S.W.R. is 1.5 : 1 from 30.5 to 32.5 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_8_2344/_p
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@ARTICLE{e74-c_8_2344,
author={Fuminori ISHITSUKA, Nobuo SATO, Haruhiko KATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Multilayer Ceramic-Frame Package for High-Frequency MMIC Modules},
year={1991},
volume={E74-C},
number={8},
pages={2344-2348},
abstract={This paper presents a new ceramic package for high-frequency MMIC modules. The package is formed from a multilayer ceramic frame whose layers are metallized over most of both sides and co-fired. The inside and outside of the frame are metallized, except around the RF and DC terminals. This new package structure can eliminate ring resonances that occur in conventional ceramic packages and can provide high I/O isolation over a wide frequency range. The RF terminal is formed from microstrip lines and a through-wall microstrip designed to have a 50-ohm impedance. The insertion loss of each RF terminal is less than 0.5 dB up to 33 GHz, with complementary I/O isolation in excess of 30 dB. The new package also provides the low input V.S.W.R. of 1.3 : 1. A 30-GHz-band MMIC module incorporating four GaAs MMIC amplifiers is demonstrated. This module's maximum gain is 19 dB, and its input V.S.W.R. is 1.5 : 1 from 30.5 to 32.5 GHz.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - A New Multilayer Ceramic-Frame Package for High-Frequency MMIC Modules
T2 - IEICE TRANSACTIONS on Electronics
SP - 2344
EP - 2348
AU - Fuminori ISHITSUKA
AU - Nobuo SATO
AU - Haruhiko KATO
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1991
AB - This paper presents a new ceramic package for high-frequency MMIC modules. The package is formed from a multilayer ceramic frame whose layers are metallized over most of both sides and co-fired. The inside and outside of the frame are metallized, except around the RF and DC terminals. This new package structure can eliminate ring resonances that occur in conventional ceramic packages and can provide high I/O isolation over a wide frequency range. The RF terminal is formed from microstrip lines and a through-wall microstrip designed to have a 50-ohm impedance. The insertion loss of each RF terminal is less than 0.5 dB up to 33 GHz, with complementary I/O isolation in excess of 30 dB. The new package also provides the low input V.S.W.R. of 1.3 : 1. A 30-GHz-band MMIC module incorporating four GaAs MMIC amplifiers is demonstrated. This module's maximum gain is 19 dB, and its input V.S.W.R. is 1.5 : 1 from 30.5 to 32.5 GHz.
ER -
English
