Development of Ultra Fine Wire and Fine Pitch Bonding Technology
Summary :
There are several kinds of semiconductor chip bonding methods--wire bonding, TAB, and flip chip bonding--and each is used in applications in ways which utilize its individual characteristics. Wire bonding is inexpensive and imposes fewer restrictions on wiring, but when used with conventional technology, it has been difficult to narrow the bonding pitch. The authors challenged themselves to develop a 40µm pitch wire bonding technology for use in development of a 600 DPI (dots per inch) LED print head. To accomplish this, a high strength ultra fine wire with a diameter of 10 µm was developed and a suitable wire bonding technology using that wire was determined. Finally, the targeted 40 µm pitch wire bonding technology was established.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.8 pp.2369-2377
- Publication Date
- 1991/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Advanced Packaging Technology for Microelectronics Manufacturing)
- Category
- Manufacturing Technology
Authors
Toshimitsu YAMASHITA
Takashi KANAMORI
Yasuo IGUCHI
Yoshinori ARAO
Susumu SHIBATA
Yasuhide OHNO
Yoshio OHZEKI
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Toshimitsu YAMASHITA, Takashi KANAMORI, Yasuo IGUCHI, Yoshinori ARAO, Susumu SHIBATA, Yasuhide OHNO, Yoshio OHZEKI, "Development of Ultra Fine Wire and Fine Pitch Bonding Technology" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 8, pp. 2369-2377, August 1991, doi: .
Abstract: There are several kinds of semiconductor chip bonding methods--wire bonding, TAB, and flip chip bonding--and each is used in applications in ways which utilize its individual characteristics. Wire bonding is inexpensive and imposes fewer restrictions on wiring, but when used with conventional technology, it has been difficult to narrow the bonding pitch. The authors challenged themselves to develop a 40µm pitch wire bonding technology for use in development of a 600 DPI (dots per inch) LED print head. To accomplish this, a high strength ultra fine wire with a diameter of 10 µm was developed and a suitable wire bonding technology using that wire was determined. Finally, the targeted 40 µm pitch wire bonding technology was established.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_8_2369/_p
Copy
@ARTICLE{e74-c_8_2369,
author={Toshimitsu YAMASHITA, Takashi KANAMORI, Yasuo IGUCHI, Yoshinori ARAO, Susumu SHIBATA, Yasuhide OHNO, Yoshio OHZEKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of Ultra Fine Wire and Fine Pitch Bonding Technology},
year={1991},
volume={E74-C},
number={8},
pages={2369-2377},
abstract={There are several kinds of semiconductor chip bonding methods--wire bonding, TAB, and flip chip bonding--and each is used in applications in ways which utilize its individual characteristics. Wire bonding is inexpensive and imposes fewer restrictions on wiring, but when used with conventional technology, it has been difficult to narrow the bonding pitch. The authors challenged themselves to develop a 40µm pitch wire bonding technology for use in development of a 600 DPI (dots per inch) LED print head. To accomplish this, a high strength ultra fine wire with a diameter of 10 µm was developed and a suitable wire bonding technology using that wire was determined. Finally, the targeted 40 µm pitch wire bonding technology was established.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Development of Ultra Fine Wire and Fine Pitch Bonding Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 2369
EP - 2377
AU - Toshimitsu YAMASHITA
AU - Takashi KANAMORI
AU - Yasuo IGUCHI
AU - Yoshinori ARAO
AU - Susumu SHIBATA
AU - Yasuhide OHNO
AU - Yoshio OHZEKI
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1991
AB - There are several kinds of semiconductor chip bonding methods--wire bonding, TAB, and flip chip bonding--and each is used in applications in ways which utilize its individual characteristics. Wire bonding is inexpensive and imposes fewer restrictions on wiring, but when used with conventional technology, it has been difficult to narrow the bonding pitch. The authors challenged themselves to develop a 40µm pitch wire bonding technology for use in development of a 600 DPI (dots per inch) LED print head. To accomplish this, a high strength ultra fine wire with a diameter of 10 µm was developed and a suitable wire bonding technology using that wire was determined. Finally, the targeted 40 µm pitch wire bonding technology was established.
ER -
English
