A 34.8 GHz 1/4 Static Frequency Divider Using AlGaAs/GaAs HBTs
Summary :
A one-by-four static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was designed to operate at a bias condition that gave a maximum cutoff frequency fT and a maximum oscillation freqency fmax. The fT and fmax applied to the divider were 68 GHz and 56 GHz, respectively. As a result of the tests, the circuit operated up to 34.8 GHz at a power supply voltage of 9 V and power dissipation of 495 mW. A low minimum input signal power level of 0 dBm was also achieved.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.10 pp.1105-1109
- Publication Date
- 1992/10/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Yoshiki YAMAUCHI, Osaake NAKAJIMA, Koichi NAGATA, Hiroshi ITO, Tadao ISHIBASHI, "A 34.8 GHz 1/4 Static Frequency Divider Using AlGaAs/GaAs HBTs" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 10, pp. 1105-1109, October 1992, doi: .
Abstract: A one-by-four static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was designed to operate at a bias condition that gave a maximum cutoff frequency fT and a maximum oscillation freqency fmax. The fT and fmax applied to the divider were 68 GHz and 56 GHz, respectively. As a result of the tests, the circuit operated up to 34.8 GHz at a power supply voltage of 9 V and power dissipation of 495 mW. A low minimum input signal power level of 0 dBm was also achieved.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_10_1105/_p
Copy
@ARTICLE{e75-c_10_1105,
author={Yoshiki YAMAUCHI, Osaake NAKAJIMA, Koichi NAGATA, Hiroshi ITO, Tadao ISHIBASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 34.8 GHz 1/4 Static Frequency Divider Using AlGaAs/GaAs HBTs},
year={1992},
volume={E75-C},
number={10},
pages={1105-1109},
abstract={A one-by-four static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was designed to operate at a bias condition that gave a maximum cutoff frequency fT and a maximum oscillation freqency fmax. The fT and fmax applied to the divider were 68 GHz and 56 GHz, respectively. As a result of the tests, the circuit operated up to 34.8 GHz at a power supply voltage of 9 V and power dissipation of 495 mW. A low minimum input signal power level of 0 dBm was also achieved.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - A 34.8 GHz 1/4 Static Frequency Divider Using AlGaAs/GaAs HBTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1105
EP - 1109
AU - Yoshiki YAMAUCHI
AU - Osaake NAKAJIMA
AU - Koichi NAGATA
AU - Hiroshi ITO
AU - Tadao ISHIBASHI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1992
AB - A one-by-four static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was designed to operate at a bias condition that gave a maximum cutoff frequency fT and a maximum oscillation freqency fmax. The fT and fmax applied to the divider were 68 GHz and 56 GHz, respectively. As a result of the tests, the circuit operated up to 34.8 GHz at a power supply voltage of 9 V and power dissipation of 495 mW. A low minimum input signal power level of 0 dBm was also achieved.
ER -
English
