Computer-Aided Analysis of GaAs MESFETs with p-Buffer Layer on the Semi-Insulating Substrate
Summary :
GaAs MESFETs with a p-buffer layer (or a buried p-layer) are important devices for high-speed GaAs ICs. To study what conditions are required as a good substrate for ICs, we have investigated, by two-dimensional simulation, small-signal parameters and drain-current transients of GaAs MESFETs with a p-buffer layer on the semi-insulating substrate. It is shown that the introduction of a p-buffer layer is effective to improve the transconductance and the cuttoff frequeycy. These parameters are not degrade even if the p-layer doping is increased and a neurtral p-region exists. It is also shown that drain-current drifts and hysteresis in I-V curves can occur in a case with a p-buffer layer, too. It is concluded that the introduction of a relatively highly-doped p-layer on a substrate with low acceptor and electron trap (EL2) densities is effective to realize the stable and high performance of GaAs MESFETs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.10 pp.1140-1145
- Publication Date
- 1992/10/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
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Kazushige HORIO, Naohisa OKUMURA, "Computer-Aided Analysis of GaAs MESFETs with p-Buffer Layer on the Semi-Insulating Substrate" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 10, pp. 1140-1145, October 1992, doi: .
Abstract: GaAs MESFETs with a p-buffer layer (or a buried p-layer) are important devices for high-speed GaAs ICs. To study what conditions are required as a good substrate for ICs, we have investigated, by two-dimensional simulation, small-signal parameters and drain-current transients of GaAs MESFETs with a p-buffer layer on the semi-insulating substrate. It is shown that the introduction of a p-buffer layer is effective to improve the transconductance and the cuttoff frequeycy. These parameters are not degrade even if the p-layer doping is increased and a neurtral p-region exists. It is also shown that drain-current drifts and hysteresis in I-V curves can occur in a case with a p-buffer layer, too. It is concluded that the introduction of a relatively highly-doped p-layer on a substrate with low acceptor and electron trap (EL2) densities is effective to realize the stable and high performance of GaAs MESFETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_10_1140/_p
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@ARTICLE{e75-c_10_1140,
author={Kazushige HORIO, Naohisa OKUMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Computer-Aided Analysis of GaAs MESFETs with p-Buffer Layer on the Semi-Insulating Substrate},
year={1992},
volume={E75-C},
number={10},
pages={1140-1145},
abstract={GaAs MESFETs with a p-buffer layer (or a buried p-layer) are important devices for high-speed GaAs ICs. To study what conditions are required as a good substrate for ICs, we have investigated, by two-dimensional simulation, small-signal parameters and drain-current transients of GaAs MESFETs with a p-buffer layer on the semi-insulating substrate. It is shown that the introduction of a p-buffer layer is effective to improve the transconductance and the cuttoff frequeycy. These parameters are not degrade even if the p-layer doping is increased and a neurtral p-region exists. It is also shown that drain-current drifts and hysteresis in I-V curves can occur in a case with a p-buffer layer, too. It is concluded that the introduction of a relatively highly-doped p-layer on a substrate with low acceptor and electron trap (EL2) densities is effective to realize the stable and high performance of GaAs MESFETs.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Computer-Aided Analysis of GaAs MESFETs with p-Buffer Layer on the Semi-Insulating Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 1140
EP - 1145
AU - Kazushige HORIO
AU - Naohisa OKUMURA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1992
AB - GaAs MESFETs with a p-buffer layer (or a buried p-layer) are important devices for high-speed GaAs ICs. To study what conditions are required as a good substrate for ICs, we have investigated, by two-dimensional simulation, small-signal parameters and drain-current transients of GaAs MESFETs with a p-buffer layer on the semi-insulating substrate. It is shown that the introduction of a p-buffer layer is effective to improve the transconductance and the cuttoff frequeycy. These parameters are not degrade even if the p-layer doping is increased and a neurtral p-region exists. It is also shown that drain-current drifts and hysteresis in I-V curves can occur in a case with a p-buffer layer, too. It is concluded that the introduction of a relatively highly-doped p-layer on a substrate with low acceptor and electron trap (EL2) densities is effective to realize the stable and high performance of GaAs MESFETs.
ER -
English
