A 48-Lead Film Carrier for Ultra-High Speed GaAs Digital Integrated Circuits
Summary :
A film carrier with 48 peripheral-contacts, which is applicable to ultra-high speed GaAs digital integrated circuits (ICs) with a more than 10 Gbps operation, has been developed. The film carrier has been realized using the following newly developed techniques; (1) wave guides with a well-controlled characteristic impedance of 50 Ω, (2) precise vias of as small as 50 µm diameter conducting both sides of grounded metal planes on a polyimide film, and (3) a feed-through structure for high speed input signals with good impedance matching. The film carrier was molded by resin after ILB (inner lead bonding) to a chip with a copper plate heat spreader. As an application, the film carrier has been applied to a 3 Gbps operational 4-bit GaAs multiplexer IC, and has been proved to have excellent high-frequency characteristics.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.10 pp.1172-1178
- Publication Date
- 1992/10/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
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Chiaki TAKUBO, Hiroshi TAZAWA, Mamoru SAKAKI, Yoshiharu TSUBOI, Masao MOCHIZUKI, Hirohiko IZUMI, "A 48-Lead Film Carrier for Ultra-High Speed GaAs Digital Integrated Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 10, pp. 1172-1178, October 1992, doi: .
Abstract: A film carrier with 48 peripheral-contacts, which is applicable to ultra-high speed GaAs digital integrated circuits (ICs) with a more than 10 Gbps operation, has been developed. The film carrier has been realized using the following newly developed techniques; (1) wave guides with a well-controlled characteristic impedance of 50 Ω, (2) precise vias of as small as 50 µm diameter conducting both sides of grounded metal planes on a polyimide film, and (3) a feed-through structure for high speed input signals with good impedance matching. The film carrier was molded by resin after ILB (inner lead bonding) to a chip with a copper plate heat spreader. As an application, the film carrier has been applied to a 3 Gbps operational 4-bit GaAs multiplexer IC, and has been proved to have excellent high-frequency characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_10_1172/_p
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@ARTICLE{e75-c_10_1172,
author={Chiaki TAKUBO, Hiroshi TAZAWA, Mamoru SAKAKI, Yoshiharu TSUBOI, Masao MOCHIZUKI, Hirohiko IZUMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 48-Lead Film Carrier for Ultra-High Speed GaAs Digital Integrated Circuits},
year={1992},
volume={E75-C},
number={10},
pages={1172-1178},
abstract={A film carrier with 48 peripheral-contacts, which is applicable to ultra-high speed GaAs digital integrated circuits (ICs) with a more than 10 Gbps operation, has been developed. The film carrier has been realized using the following newly developed techniques; (1) wave guides with a well-controlled characteristic impedance of 50 Ω, (2) precise vias of as small as 50 µm diameter conducting both sides of grounded metal planes on a polyimide film, and (3) a feed-through structure for high speed input signals with good impedance matching. The film carrier was molded by resin after ILB (inner lead bonding) to a chip with a copper plate heat spreader. As an application, the film carrier has been applied to a 3 Gbps operational 4-bit GaAs multiplexer IC, and has been proved to have excellent high-frequency characteristics.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - A 48-Lead Film Carrier for Ultra-High Speed GaAs Digital Integrated Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 1172
EP - 1178
AU - Chiaki TAKUBO
AU - Hiroshi TAZAWA
AU - Mamoru SAKAKI
AU - Yoshiharu TSUBOI
AU - Masao MOCHIZUKI
AU - Hirohiko IZUMI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1992
AB - A film carrier with 48 peripheral-contacts, which is applicable to ultra-high speed GaAs digital integrated circuits (ICs) with a more than 10 Gbps operation, has been developed. The film carrier has been realized using the following newly developed techniques; (1) wave guides with a well-controlled characteristic impedance of 50 Ω, (2) precise vias of as small as 50 µm diameter conducting both sides of grounded metal planes on a polyimide film, and (3) a feed-through structure for high speed input signals with good impedance matching. The film carrier was molded by resin after ILB (inner lead bonding) to a chip with a copper plate heat spreader. As an application, the film carrier has been applied to a 3 Gbps operational 4-bit GaAs multiplexer IC, and has been proved to have excellent high-frequency characteristics.
ER -
English
