Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs

Kazuya MATSUZAWA; Minoru TAKAHASHI; Makoto YOSHIMI; Naoyuki SHIGYO

Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs

Kazuya MATSUZAWA, Minoru TAKAHASHI, Makoto YOSHIMI, Naoyuki SHIGYO

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The velocity overshoot and hot carrier effects in thin-film SOI-nMOSFETs have been studied using a two-dimensional device simulator based on the energy transport model. It has been found that the velocity overshoot effect in a nearly-intrinsic device becomes pronounced in the short channel region because of their high carrier mobility. The distribution of the electron velocity in a 0.2 µm channel length SOI device shows that the velocity overshoot takes place over the whole channel region, which enhances the drive capability significantly. The behaviors of hot carriers injected into the gate oxide and the back oxide have been simulated for the first time by using the energy distribution functions of electrons and holes at the SOI-SiO₂ interface and solving the current continuity equation in the oxide layer. It has been found that hot carriers are injected not only into the gate oxide but also into the back oxide, which can degrade hot-carrier reliability in small-featured thin-film SOI-MOSFETs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.12 pp.1477-1483

Publication Date: 1992/12/25

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Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)

Category: Hot Carrier

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Kazuya MATSUZAWA, Minoru TAKAHASHI, Makoto YOSHIMI, Naoyuki SHIGYO, "Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 12, pp. 1477-1483, December 1992, doi: .
Abstract: The velocity overshoot and hot carrier effects in thin-film SOI-nMOSFETs have been studied using a two-dimensional device simulator based on the energy transport model. It has been found that the velocity overshoot effect in a nearly-intrinsic device becomes pronounced in the short channel region because of their high carrier mobility. The distribution of the electron velocity in a 0.2 µm channel length SOI device shows that the velocity overshoot takes place over the whole channel region, which enhances the drive capability significantly. The behaviors of hot carriers injected into the gate oxide and the back oxide have been simulated for the first time by using the energy distribution functions of electrons and holes at the SOI-SiO₂ interface and solving the current continuity equation in the oxide layer. It has been found that hot carriers are injected not only into the gate oxide but also into the back oxide, which can degrade hot-carrier reliability in small-featured thin-film SOI-MOSFETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_12_1477/_p

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@ARTICLE{e75-c_12_1477,
author={Kazuya MATSUZAWA, Minoru TAKAHASHI, Makoto YOSHIMI, Naoyuki SHIGYO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs},
year={1992},
volume={E75-C},
number={12},
pages={1477-1483},
abstract={The velocity overshoot and hot carrier effects in thin-film SOI-nMOSFETs have been studied using a two-dimensional device simulator based on the energy transport model. It has been found that the velocity overshoot effect in a nearly-intrinsic device becomes pronounced in the short channel region because of their high carrier mobility. The distribution of the electron velocity in a 0.2 µm channel length SOI device shows that the velocity overshoot takes place over the whole channel region, which enhances the drive capability significantly. The behaviors of hot carriers injected into the gate oxide and the back oxide have been simulated for the first time by using the energy distribution functions of electrons and holes at the SOI-SiO₂ interface and solving the current continuity equation in the oxide layer. It has been found that hot carriers are injected not only into the gate oxide but also into the back oxide, which can degrade hot-carrier reliability in small-featured thin-film SOI-MOSFETs.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1477
EP - 1483
AU - Kazuya MATSUZAWA
AU - Minoru TAKAHASHI
AU - Makoto YOSHIMI
AU - Naoyuki SHIGYO
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1992
AB - The velocity overshoot and hot carrier effects in thin-film SOI-nMOSFETs have been studied using a two-dimensional device simulator based on the energy transport model. It has been found that the velocity overshoot effect in a nearly-intrinsic device becomes pronounced in the short channel region because of their high carrier mobility. The distribution of the electron velocity in a 0.2 µm channel length SOI device shows that the velocity overshoot takes place over the whole channel region, which enhances the drive capability significantly. The behaviors of hot carriers injected into the gate oxide and the back oxide have been simulated for the first time by using the energy distribution functions of electrons and holes at the SOI-SiO₂ interface and solving the current continuity equation in the oxide layer. It has been found that hot carriers are injected not only into the gate oxide but also into the back oxide, which can degrade hot-carrier reliability in small-featured thin-film SOI-MOSFETs.
ER -