IEICE TRANSACTIONS on Electronics
Unified MOSFET Model for All Channel Lengths down to Quarter Micron
Summary :
This work describes a new analytical MOSFET model for analog circuit simulation based on the charge-sheet model. The current equation consists of diffusion and drift components, therefore Ids is a smooth function of the applied voltages. Since the original charge-sheet model is valid only for long-channel transistors, it has been further developed to describe quarter-micron MOSFETs by introducing the lateral electric field Ey into the theory. The new model includes these field contributions self-consistently, and describes the drain current of MOSFETs from long to quarter-micron channel lengths with a single model parameter set without discontinuities in derivatives of the drain current Ids. The mobility reduction due to Ey is described by an empirical equation with physical parameter values taken from literature. Only two fitting parameters, the impurity scattering and the surface roughness scattering in the mobility equation, are added to the physical parameters. The subdiffusion lengths are also taken as fitting parameters. Though the new model reduces the number of fitting parameters totally to four, it reproduces measured Ids excellently for MOSFETs with all channel lengths. The model has been included in the parameter extraction program JANUS, which extracts model parameters automatically. The algorithm for parameter extraction is summarized.
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- IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.172-180
- Publication Date
- 1992/02/25
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- Type of Manuscript
- Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
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Mitiko MIURA-MATTAUSCH, Ulrich WEINERT, "Unified MOSFET Model for All Channel Lengths down to Quarter Micron" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 2, pp. 172-180, February 1992, doi: .
Abstract: This work describes a new analytical MOSFET model for analog circuit simulation based on the charge-sheet model. The current equation consists of diffusion and drift components, therefore Ids is a smooth function of the applied voltages. Since the original charge-sheet model is valid only for long-channel transistors, it has been further developed to describe quarter-micron MOSFETs by introducing the lateral electric field Ey into the theory. The new model includes these field contributions self-consistently, and describes the drain current of MOSFETs from long to quarter-micron channel lengths with a single model parameter set without discontinuities in derivatives of the drain current Ids. The mobility reduction due to Ey is described by an empirical equation with physical parameter values taken from literature. Only two fitting parameters, the impurity scattering and the surface roughness scattering in the mobility equation, are added to the physical parameters. The subdiffusion lengths are also taken as fitting parameters. Though the new model reduces the number of fitting parameters totally to four, it reproduces measured Ids excellently for MOSFETs with all channel lengths. The model has been included in the parameter extraction program JANUS, which extracts model parameters automatically. The algorithm for parameter extraction is summarized.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_172/_p
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@ARTICLE{e75-c_2_172,
author={Mitiko MIURA-MATTAUSCH, Ulrich WEINERT, },
journal={IEICE TRANSACTIONS on Electronics},
title={Unified MOSFET Model for All Channel Lengths down to Quarter Micron},
year={1992},
volume={E75-C},
number={2},
pages={172-180},
abstract={This work describes a new analytical MOSFET model for analog circuit simulation based on the charge-sheet model. The current equation consists of diffusion and drift components, therefore Ids is a smooth function of the applied voltages. Since the original charge-sheet model is valid only for long-channel transistors, it has been further developed to describe quarter-micron MOSFETs by introducing the lateral electric field Ey into the theory. The new model includes these field contributions self-consistently, and describes the drain current of MOSFETs from long to quarter-micron channel lengths with a single model parameter set without discontinuities in derivatives of the drain current Ids. The mobility reduction due to Ey is described by an empirical equation with physical parameter values taken from literature. Only two fitting parameters, the impurity scattering and the surface roughness scattering in the mobility equation, are added to the physical parameters. The subdiffusion lengths are also taken as fitting parameters. Though the new model reduces the number of fitting parameters totally to four, it reproduces measured Ids excellently for MOSFETs with all channel lengths. The model has been included in the parameter extraction program JANUS, which extracts model parameters automatically. The algorithm for parameter extraction is summarized.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Unified MOSFET Model for All Channel Lengths down to Quarter Micron
T2 - IEICE TRANSACTIONS on Electronics
SP - 172
EP - 180
AU - Mitiko MIURA-MATTAUSCH
AU - Ulrich WEINERT
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - This work describes a new analytical MOSFET model for analog circuit simulation based on the charge-sheet model. The current equation consists of diffusion and drift components, therefore Ids is a smooth function of the applied voltages. Since the original charge-sheet model is valid only for long-channel transistors, it has been further developed to describe quarter-micron MOSFETs by introducing the lateral electric field Ey into the theory. The new model includes these field contributions self-consistently, and describes the drain current of MOSFETs from long to quarter-micron channel lengths with a single model parameter set without discontinuities in derivatives of the drain current Ids. The mobility reduction due to Ey is described by an empirical equation with physical parameter values taken from literature. Only two fitting parameters, the impurity scattering and the surface roughness scattering in the mobility equation, are added to the physical parameters. The subdiffusion lengths are also taken as fitting parameters. Though the new model reduces the number of fitting parameters totally to four, it reproduces measured Ids excellently for MOSFETs with all channel lengths. The model has been included in the parameter extraction program JANUS, which extracts model parameters automatically. The algorithm for parameter extraction is summarized.
ER -
English
