A spherical-harmonics expansion method is used to find approximate numerical solutions of the Boltzmann Transport Equation in the homogeneous case. Acoustic and optical phonon scattering, ionized impurity scattering as well as an energy band structure fitting the silicon density of states up to 2.6 eV above the conduction-band edge are used in the model. Comparisons with Monte Carlo data show excellent agreement, and prove that detailed information on the high-energy tail of the distribution function can be obtained at very low cost using this methodology.
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Davide VENTURA, Antonio GNUDI, Giorgo BACCARANI, "An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonics Expansion" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 2, pp. 194-199, February 1992, doi: .
Abstract: A spherical-harmonics expansion method is used to find approximate numerical solutions of the Boltzmann Transport Equation in the homogeneous case. Acoustic and optical phonon scattering, ionized impurity scattering as well as an energy band structure fitting the silicon density of states up to 2.6 eV above the conduction-band edge are used in the model. Comparisons with Monte Carlo data show excellent agreement, and prove that detailed information on the high-energy tail of the distribution function can be obtained at very low cost using this methodology.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_194/_p
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@ARTICLE{e75-c_2_194,
author={Davide VENTURA, Antonio GNUDI, Giorgo BACCARANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonics Expansion},
year={1992},
volume={E75-C},
number={2},
pages={194-199},
abstract={A spherical-harmonics expansion method is used to find approximate numerical solutions of the Boltzmann Transport Equation in the homogeneous case. Acoustic and optical phonon scattering, ionized impurity scattering as well as an energy band structure fitting the silicon density of states up to 2.6 eV above the conduction-band edge are used in the model. Comparisons with Monte Carlo data show excellent agreement, and prove that detailed information on the high-energy tail of the distribution function can be obtained at very low cost using this methodology.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonics Expansion
T2 - IEICE TRANSACTIONS on Electronics
SP - 194
EP - 199
AU - Davide VENTURA
AU - Antonio GNUDI
AU - Giorgo BACCARANI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - A spherical-harmonics expansion method is used to find approximate numerical solutions of the Boltzmann Transport Equation in the homogeneous case. Acoustic and optical phonon scattering, ionized impurity scattering as well as an energy band structure fitting the silicon density of states up to 2.6 eV above the conduction-band edge are used in the model. Comparisons with Monte Carlo data show excellent agreement, and prove that detailed information on the high-energy tail of the distribution function can be obtained at very low cost using this methodology.
ER -