High-Power Microwave Transmit-Receive Switch with Series and Shunt GaAs FETs
Summary :
A new monolithic transmit-receive GaAs FET switch has been developed, named the FET series-shunt connected TR switch and capable of switching high rf transmitting power. Both insertion loss and isolation limitations of this type TR switch have been analyzed using the switching cutoff frequency of the control FET, and the formula for calculating the rated power is provided. A unique feature of this switch is that the power handling of the switch is not limited by the FET gate break-down voltage but is limited by the saturation current, so higher handling power capability is available by using FETs with a larger gate periphery. A design example of the TR switch at a rated power of 8 W in the transmit mode as well as the results of an X band switch are presented.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.252-258
- Publication Date
- 1992/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Microwave and Millimeter Wave Technology
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Makoto MATSUNAGA, Kazuhiko NAKAHARA, "High-Power Microwave Transmit-Receive Switch with Series and Shunt GaAs FETs" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 2, pp. 252-258, February 1992, doi: .
Abstract: A new monolithic transmit-receive GaAs FET switch has been developed, named the FET series-shunt connected TR switch and capable of switching high rf transmitting power. Both insertion loss and isolation limitations of this type TR switch have been analyzed using the switching cutoff frequency of the control FET, and the formula for calculating the rated power is provided. A unique feature of this switch is that the power handling of the switch is not limited by the FET gate break-down voltage but is limited by the saturation current, so higher handling power capability is available by using FETs with a larger gate periphery. A design example of the TR switch at a rated power of 8 W in the transmit mode as well as the results of an X band switch are presented.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_252/_p
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@ARTICLE{e75-c_2_252,
author={Makoto MATSUNAGA, Kazuhiko NAKAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Power Microwave Transmit-Receive Switch with Series and Shunt GaAs FETs},
year={1992},
volume={E75-C},
number={2},
pages={252-258},
abstract={A new monolithic transmit-receive GaAs FET switch has been developed, named the FET series-shunt connected TR switch and capable of switching high rf transmitting power. Both insertion loss and isolation limitations of this type TR switch have been analyzed using the switching cutoff frequency of the control FET, and the formula for calculating the rated power is provided. A unique feature of this switch is that the power handling of the switch is not limited by the FET gate break-down voltage but is limited by the saturation current, so higher handling power capability is available by using FETs with a larger gate periphery. A design example of the TR switch at a rated power of 8 W in the transmit mode as well as the results of an X band switch are presented.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - High-Power Microwave Transmit-Receive Switch with Series and Shunt GaAs FETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 252
EP - 258
AU - Makoto MATSUNAGA
AU - Kazuhiko NAKAHARA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - A new monolithic transmit-receive GaAs FET switch has been developed, named the FET series-shunt connected TR switch and capable of switching high rf transmitting power. Both insertion loss and isolation limitations of this type TR switch have been analyzed using the switching cutoff frequency of the control FET, and the formula for calculating the rated power is provided. A unique feature of this switch is that the power handling of the switch is not limited by the FET gate break-down voltage but is limited by the saturation current, so higher handling power capability is available by using FETs with a larger gate periphery. A design example of the TR switch at a rated power of 8 W in the transmit mode as well as the results of an X band switch are presented.
ER -
English
