2.5-V Bipolar/CMOS Circuits for 0.25-µm BiCMOS Technology
Summary :
An ECL circuit with an active pull-down device, operated from a CMOS supply voltage, is described as a high-speed digital circuit for a 0.25-µm BiCMOS technology. A pair of ECL/CMOS level converters with build-in logic capability is presented for effective intermixing of ECL with CMOS circuits. Using a 2.5-V supply and a reduced-swing BiNMOS buffer, the ECL circuit has reduced power dissipation, while still providing good speed. A design example shows the implementation of complex logic by emitter and collector dottings and the selective use of ECL circuits to achieve high performance.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.4 pp.383-389
- Publication Date
- 1992/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Chih-Liang CHEN, "2.5-V Bipolar/CMOS Circuits for 0.25-µm BiCMOS Technology" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 4, pp. 383-389, April 1992, doi: .
Abstract: An ECL circuit with an active pull-down device, operated from a CMOS supply voltage, is described as a high-speed digital circuit for a 0.25-µm BiCMOS technology. A pair of ECL/CMOS level converters with build-in logic capability is presented for effective intermixing of ECL with CMOS circuits. Using a 2.5-V supply and a reduced-swing BiNMOS buffer, the ECL circuit has reduced power dissipation, while still providing good speed. A design example shows the implementation of complex logic by emitter and collector dottings and the selective use of ECL circuits to achieve high performance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_4_383/_p
Copy
@ARTICLE{e75-c_4_383,
author={Chih-Liang CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={2.5-V Bipolar/CMOS Circuits for 0.25-µm BiCMOS Technology},
year={1992},
volume={E75-C},
number={4},
pages={383-389},
abstract={An ECL circuit with an active pull-down device, operated from a CMOS supply voltage, is described as a high-speed digital circuit for a 0.25-µm BiCMOS technology. A pair of ECL/CMOS level converters with build-in logic capability is presented for effective intermixing of ECL with CMOS circuits. Using a 2.5-V supply and a reduced-swing BiNMOS buffer, the ECL circuit has reduced power dissipation, while still providing good speed. A design example shows the implementation of complex logic by emitter and collector dottings and the selective use of ECL circuits to achieve high performance.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - 2.5-V Bipolar/CMOS Circuits for 0.25-µm BiCMOS Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 383
EP - 389
AU - Chih-Liang CHEN
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1992
AB - An ECL circuit with an active pull-down device, operated from a CMOS supply voltage, is described as a high-speed digital circuit for a 0.25-µm BiCMOS technology. A pair of ECL/CMOS level converters with build-in logic capability is presented for effective intermixing of ECL with CMOS circuits. Using a 2.5-V supply and a reduced-swing BiNMOS buffer, the ECL circuit has reduced power dissipation, while still providing good speed. A design example shows the implementation of complex logic by emitter and collector dottings and the selective use of ECL circuits to achieve high performance.
ER -
English
