IEICE TRANSACTIONS on Electronics
Multigigahertz Voltage-Controlled Oscillators in Advanced Silicon Bipolar Technology
Summary :
Relaxation-type monolithic silicon bipolar voltage-controlled oscillators (VCO's) with center frequencies ranging from 1.5 to 5 GHz are described. The maximum oscillating frequency achieved is 7.4 GHz. The VCO's dissipate about 70 mW from a 3.6-V supply, including the output buffer and voltage-to-current converter stages. Two types of on-chip timing capacitor structures and various configurations used in achieving these results are described. A wide tuning range has been achieved which is sufficient to cover the normal process tolerances and supply variations expected in a practical environment. The circuits are fabricated in an advanced 0.8-µm double-poly self-aligned bipolar technology.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.4 pp.566-568
- Publication Date
- 1992/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
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Mehmet SOYUER, James D. WARNOCK, "Multigigahertz Voltage-Controlled Oscillators in Advanced Silicon Bipolar Technology" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 4, pp. 566-568, April 1992, doi: .
Abstract: Relaxation-type monolithic silicon bipolar voltage-controlled oscillators (VCO's) with center frequencies ranging from 1.5 to 5 GHz are described. The maximum oscillating frequency achieved is 7.4 GHz. The VCO's dissipate about 70 mW from a 3.6-V supply, including the output buffer and voltage-to-current converter stages. Two types of on-chip timing capacitor structures and various configurations used in achieving these results are described. A wide tuning range has been achieved which is sufficient to cover the normal process tolerances and supply variations expected in a practical environment. The circuits are fabricated in an advanced 0.8-µm double-poly self-aligned bipolar technology.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_4_566/_p
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@ARTICLE{e75-c_4_566,
author={Mehmet SOYUER, James D. WARNOCK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Multigigahertz Voltage-Controlled Oscillators in Advanced Silicon Bipolar Technology},
year={1992},
volume={E75-C},
number={4},
pages={566-568},
abstract={Relaxation-type monolithic silicon bipolar voltage-controlled oscillators (VCO's) with center frequencies ranging from 1.5 to 5 GHz are described. The maximum oscillating frequency achieved is 7.4 GHz. The VCO's dissipate about 70 mW from a 3.6-V supply, including the output buffer and voltage-to-current converter stages. Two types of on-chip timing capacitor structures and various configurations used in achieving these results are described. A wide tuning range has been achieved which is sufficient to cover the normal process tolerances and supply variations expected in a practical environment. The circuits are fabricated in an advanced 0.8-µm double-poly self-aligned bipolar technology.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Multigigahertz Voltage-Controlled Oscillators in Advanced Silicon Bipolar Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 566
EP - 568
AU - Mehmet SOYUER
AU - James D. WARNOCK
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1992
AB - Relaxation-type monolithic silicon bipolar voltage-controlled oscillators (VCO's) with center frequencies ranging from 1.5 to 5 GHz are described. The maximum oscillating frequency achieved is 7.4 GHz. The VCO's dissipate about 70 mW from a 3.6-V supply, including the output buffer and voltage-to-current converter stages. Two types of on-chip timing capacitor structures and various configurations used in achieving these results are described. A wide tuning range has been achieved which is sufficient to cover the normal process tolerances and supply variations expected in a practical environment. The circuits are fabricated in an advanced 0.8-µm double-poly self-aligned bipolar technology.
ER -
English
