Initial Stage of SiO2/Si Interface Formation on Si(111) Surface
Summary :
The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.757-763
- Publication Date
- 1992/07/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Ultra Clean Technology)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Hiroshi NOHIRA, Yoshinari TAMURA, Hiroki OGAWA, Takeo HATTORI, "Initial Stage of SiO2/Si Interface Formation on Si(111) Surface" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 7, pp. 757-763, July 1992, doi: .
Abstract: The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_757/_p
Copy
@ARTICLE{e75-c_7_757,
author={Hiroshi NOHIRA, Yoshinari TAMURA, Hiroki OGAWA, Takeo HATTORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Initial Stage of SiO2/Si Interface Formation on Si(111) Surface},
year={1992},
volume={E75-C},
number={7},
pages={757-763},
abstract={The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300
keywords={},
doi={},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - Initial Stage of SiO2/Si Interface Formation on Si(111) Surface
T2 - IEICE TRANSACTIONS on Electronics
SP - 757
EP - 763
AU - Hiroshi NOHIRA
AU - Yoshinari TAMURA
AU - Hiroki OGAWA
AU - Takeo HATTORI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300
ER -
English
