Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces

Tatsuhiro YASAKA; Masaru TAKAKURA; Kenichi SAWARA; Shigeo UENAGA; Hiroshi YASUTAKE; Seiichi MIYAZAKI; Masataka HIROSE

Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces

Tatsuhiro YASAKA, Masaru TAKAKURA, Kenichi SAWARA, Shigeo UENAGA, Hiroshi YASUTAKE, Seiichi MIYAZAKI, Masataka HIROSE

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Hydrogen termination of HF-treated Si surfaces and the oxidation kinetics have been studied by x-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FT-IR) Attenuated Total Reflection (ATR). The oxidation of hydrogen-terminated Si in air or in pure water proceeds parallel to the surface presumably from step edges, resulting in the layer-by-layer oxidation. The oxide gryowth rate on an Si(100) surface is faster than (110) and (111) when the wafer is stored in pure water. This is interpreted in terms of the steric hindrance against molecular oxygen penetration throughth the (110) and (111) surfaces where the atom void size is equal to or smaller than O₂ molecule. The oxide growth rate in pure water for heavily doped n-type Si is significantly high compared to that of heavily doped p-type Si. This is explained by the conduction electron tunneling from Si to absorbed O₂ molecule to form the O₂^- state. O₂^- ions easily decompose and induce the surface electric field, enhancing the oxidation rate. It is found that the oxidation of heavily doped n-type Si in pure water is effectively suppressed by adding a small amount (1003600 ppm) of HCl.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.764-769

Publication Date: 1992/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)

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Tatsuhiro YASAKA, Masaru TAKAKURA, Kenichi SAWARA, Shigeo UENAGA, Hiroshi YASUTAKE, Seiichi MIYAZAKI, Masataka HIROSE, "Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 7, pp. 764-769, July 1992, doi: .
Abstract: Hydrogen termination of HF-treated Si surfaces and the oxidation kinetics have been studied by x-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FT-IR) Attenuated Total Reflection (ATR). The oxidation of hydrogen-terminated Si in air or in pure water proceeds parallel to the surface presumably from step edges, resulting in the layer-by-layer oxidation. The oxide gryowth rate on an Si(100) surface is faster than (110) and (111) when the wafer is stored in pure water. This is interpreted in terms of the steric hindrance against molecular oxygen penetration throughth the (110) and (111) surfaces where the atom void size is equal to or smaller than O₂ molecule. The oxide growth rate in pure water for heavily doped n-type Si is significantly high compared to that of heavily doped p-type Si. This is explained by the conduction electron tunneling from Si to absorbed O₂ molecule to form the O₂^- state. O₂^- ions easily decompose and induce the surface electric field, enhancing the oxidation rate. It is found that the oxidation of heavily doped n-type Si in pure water is effectively suppressed by adding a small amount (1003600 ppm) of HCl.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_764/_p

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@ARTICLE{e75-c_7_764,
author={Tatsuhiro YASAKA, Masaru TAKAKURA, Kenichi SAWARA, Shigeo UENAGA, Hiroshi YASUTAKE, Seiichi MIYAZAKI, Masataka HIROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces},
year={1992},
volume={E75-C},
number={7},
pages={764-769},
abstract={Hydrogen termination of HF-treated Si surfaces and the oxidation kinetics have been studied by x-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FT-IR) Attenuated Total Reflection (ATR). The oxidation of hydrogen-terminated Si in air or in pure water proceeds parallel to the surface presumably from step edges, resulting in the layer-by-layer oxidation. The oxide gryowth rate on an Si(100) surface is faster than (110) and (111) when the wafer is stored in pure water. This is interpreted in terms of the steric hindrance against molecular oxygen penetration throughth the (110) and (111) surfaces where the atom void size is equal to or smaller than O₂ molecule. The oxide growth rate in pure water for heavily doped n-type Si is significantly high compared to that of heavily doped p-type Si. This is explained by the conduction electron tunneling from Si to absorbed O₂ molecule to form the O₂^- state. O₂^- ions easily decompose and induce the surface electric field, enhancing the oxidation rate. It is found that the oxidation of heavily doped n-type Si in pure water is effectively suppressed by adding a small amount (1003600 ppm) of HCl.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces
T2 - IEICE TRANSACTIONS on Electronics
SP - 764
EP - 769
AU - Tatsuhiro YASAKA
AU - Masaru TAKAKURA
AU - Kenichi SAWARA
AU - Shigeo UENAGA
AU - Hiroshi YASUTAKE
AU - Seiichi MIYAZAKI
AU - Masataka HIROSE
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - Hydrogen termination of HF-treated Si surfaces and the oxidation kinetics have been studied by x-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FT-IR) Attenuated Total Reflection (ATR). The oxidation of hydrogen-terminated Si in air or in pure water proceeds parallel to the surface presumably from step edges, resulting in the layer-by-layer oxidation. The oxide gryowth rate on an Si(100) surface is faster than (110) and (111) when the wafer is stored in pure water. This is interpreted in terms of the steric hindrance against molecular oxygen penetration throughth the (110) and (111) surfaces where the atom void size is equal to or smaller than O₂ molecule. The oxide growth rate in pure water for heavily doped n-type Si is significantly high compared to that of heavily doped p-type Si. This is explained by the conduction electron tunneling from Si to absorbed O₂ molecule to form the O₂^- state. O₂^- ions easily decompose and induce the surface electric field, enhancing the oxidation rate. It is found that the oxidation of heavily doped n-type Si in pure water is effectively suppressed by adding a small amount (1003600 ppm) of HCl.
ER -