Reaction of H-Terminated Si(100) Surfaces with Oxidizer in the Heating and Cooling Process

Norikuni YABUMOTO; Yukio KOMINE

Reaction of H-Terminated Si(100) Surfaces with Oxidizer in the Heating and Cooling Process

Norikuni YABUMOTO, Yukio KOMINE

Full Text Views

0

Cite this

Summary :

Thermal desorption spectroscopy (TDS) is applied to analyze the oxidation reactions of hydrogen-terminated Si(100) surfaces in both the heating and cooling processes after hydrogen desorption. The oxidation reaction of oxygen and water with a silicon surface after hydrogen desorption shows hysteresis in the heating and cooling processes. In the cooling process, oxidation finishes when the silicon surface is adequately oxidized to about a 10 thickness. Oxidation continues to occur at lower temperatures when the total volume of oxygen and water is too small to saturate the bare silicon surface. The reaction of water with silicon releases hydrogen at more than 500. Hydrogen does not adsorb on the silicon oxide surface. A trace amount of oxygen, less than 110^-6 Torr, roughens the surface.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.770-773

Publication Date: 1992/07/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)

Category

Cite this

Copy

Norikuni YABUMOTO, Yukio KOMINE, "Reaction of H-Terminated Si(100) Surfaces with Oxidizer in the Heating and Cooling Process" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 7, pp. 770-773, July 1992, doi: .
Abstract: Thermal desorption spectroscopy (TDS) is applied to analyze the oxidation reactions of hydrogen-terminated Si(100) surfaces in both the heating and cooling processes after hydrogen desorption. The oxidation reaction of oxygen and water with a silicon surface after hydrogen desorption shows hysteresis in the heating and cooling processes. In the cooling process, oxidation finishes when the silicon surface is adequately oxidized to about a 10 thickness. Oxidation continues to occur at lower temperatures when the total volume of oxygen and water is too small to saturate the bare silicon surface. The reaction of water with silicon releases hydrogen at more than 500. Hydrogen does not adsorb on the silicon oxide surface. A trace amount of oxygen, less than 110^-6 Torr, roughens the surface.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_770/_p

Copy

@ARTICLE{e75-c_7_770,
author={Norikuni YABUMOTO, Yukio KOMINE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reaction of H-Terminated Si(100) Surfaces with Oxidizer in the Heating and Cooling Process},
year={1992},
volume={E75-C},
number={7},
pages={770-773},
abstract={Thermal desorption spectroscopy (TDS) is applied to analyze the oxidation reactions of hydrogen-terminated Si(100) surfaces in both the heating and cooling processes after hydrogen desorption. The oxidation reaction of oxygen and water with a silicon surface after hydrogen desorption shows hysteresis in the heating and cooling processes. In the cooling process, oxidation finishes when the silicon surface is adequately oxidized to about a 10 thickness. Oxidation continues to occur at lower temperatures when the total volume of oxygen and water is too small to saturate the bare silicon surface. The reaction of water with silicon releases hydrogen at more than 500. Hydrogen does not adsorb on the silicon oxide surface. A trace amount of oxygen, less than 110^-6 Torr, roughens the surface.},
keywords={},
doi={},
ISSN={},
month={July},}

Copy

TY - JOUR
TI - Reaction of H-Terminated Si(100) Surfaces with Oxidizer in the Heating and Cooling Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 770
EP - 773
AU - Norikuni YABUMOTO
AU - Yukio KOMINE
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - Thermal desorption spectroscopy (TDS) is applied to analyze the oxidation reactions of hydrogen-terminated Si(100) surfaces in both the heating and cooling processes after hydrogen desorption. The oxidation reaction of oxygen and water with a silicon surface after hydrogen desorption shows hysteresis in the heating and cooling processes. In the cooling process, oxidation finishes when the silicon surface is adequately oxidized to about a 10 thickness. Oxidation continues to occur at lower temperatures when the total volume of oxygen and water is too small to saturate the bare silicon surface. The reaction of water with silicon releases hydrogen at more than 500. Hydrogen does not adsorb on the silicon oxide surface. A trace amount of oxygen, less than 110^-6 Torr, roughens the surface.
ER -