2D Simulation of Particle Formation, Growth, and Deposition in Low-Pressure CVDs: Application of CONTAMINATE Version 2.0

Evan WHITBY; Koichi TSUZUKI

2D Simulation of Particle Formation, Growth, and Deposition in Low-Pressure CVDs: Application of CONTAMINATE Version 2.0

Evan WHITBY, Koichi TSUZUKI

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As part of Hitachi's development of clean semiconductor processing equipment, the Fluids Modeling Group of the Mechanical Engineering Research Laboratory is developing a computer model, CONTAMINATE, for simulating contamination of wafers in chemical vapor deposition (CVD) systems. CONTAMINATE is based on a 2D implementation of the SIMPLER algorithm for simulating convection/diffusion transport processes. The new model includes modules for simulating fluid flow, heat transfer, chemical reactions, and gas-phase formation and deposition of clusters and particles. CONTAMINATE outputs property fields and estimates of various film quality indices. Using CONTAMINATE we simulated a SiH₄: O₂: N₂ gas mixture at 300 K flowing over a wafer heated to 700 K. System pressures were varied from 1-100 torr and SiH₄ pressures from 0.1 to 10 torr. Deposition characteristics are in qualitative agreement with actual systems and are summarized as follows: (1) No particles larger than 0.1µm deposited for any of the conditions tested. (2) Film damage occurred above 10 torr, but no damage occurred below 10 torr. (3) Increasing SiH₄ pressure at constant system pressure eliminated particle deposition because particles grew large enought that thermophoresis blocked particle diffusion. (4) Conformal deposition of featured surfaces was achieved only at 1 torr. (5) Film thickness variation over the diameter of the wafer was 15% at 100 torr, 3% at 10 torr, and 1% at 1 torr.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.852-859

Publication Date: 1992/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)

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Evan WHITBY, Koichi TSUZUKI, "2D Simulation of Particle Formation, Growth, and Deposition in Low-Pressure CVDs: Application of CONTAMINATE Version 2.0" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 7, pp. 852-859, July 1992, doi: .
Abstract: As part of Hitachi's development of clean semiconductor processing equipment, the Fluids Modeling Group of the Mechanical Engineering Research Laboratory is developing a computer model, CONTAMINATE, for simulating contamination of wafers in chemical vapor deposition (CVD) systems. CONTAMINATE is based on a 2D implementation of the SIMPLER algorithm for simulating convection/diffusion transport processes. The new model includes modules for simulating fluid flow, heat transfer, chemical reactions, and gas-phase formation and deposition of clusters and particles. CONTAMINATE outputs property fields and estimates of various film quality indices. Using CONTAMINATE we simulated a SiH₄: O₂: N₂ gas mixture at 300 K flowing over a wafer heated to 700 K. System pressures were varied from 1-100 torr and SiH₄ pressures from 0.1 to 10 torr. Deposition characteristics are in qualitative agreement with actual systems and are summarized as follows: (1) No particles larger than 0.1µm deposited for any of the conditions tested. (2) Film damage occurred above 10 torr, but no damage occurred below 10 torr. (3) Increasing SiH₄ pressure at constant system pressure eliminated particle deposition because particles grew large enought that thermophoresis blocked particle diffusion. (4) Conformal deposition of featured surfaces was achieved only at 1 torr. (5) Film thickness variation over the diameter of the wafer was 15% at 100 torr, 3% at 10 torr, and 1% at 1 torr.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_852/_p

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@ARTICLE{e75-c_7_852,
author={Evan WHITBY, Koichi TSUZUKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={2D Simulation of Particle Formation, Growth, and Deposition in Low-Pressure CVDs: Application of CONTAMINATE Version 2.0},
year={1992},
volume={E75-C},
number={7},
pages={852-859},
abstract={As part of Hitachi's development of clean semiconductor processing equipment, the Fluids Modeling Group of the Mechanical Engineering Research Laboratory is developing a computer model, CONTAMINATE, for simulating contamination of wafers in chemical vapor deposition (CVD) systems. CONTAMINATE is based on a 2D implementation of the SIMPLER algorithm for simulating convection/diffusion transport processes. The new model includes modules for simulating fluid flow, heat transfer, chemical reactions, and gas-phase formation and deposition of clusters and particles. CONTAMINATE outputs property fields and estimates of various film quality indices. Using CONTAMINATE we simulated a SiH₄: O₂: N₂ gas mixture at 300 K flowing over a wafer heated to 700 K. System pressures were varied from 1-100 torr and SiH₄ pressures from 0.1 to 10 torr. Deposition characteristics are in qualitative agreement with actual systems and are summarized as follows: (1) No particles larger than 0.1µm deposited for any of the conditions tested. (2) Film damage occurred above 10 torr, but no damage occurred below 10 torr. (3) Increasing SiH₄ pressure at constant system pressure eliminated particle deposition because particles grew large enought that thermophoresis blocked particle diffusion. (4) Conformal deposition of featured surfaces was achieved only at 1 torr. (5) Film thickness variation over the diameter of the wafer was 15% at 100 torr, 3% at 10 torr, and 1% at 1 torr.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - 2D Simulation of Particle Formation, Growth, and Deposition in Low-Pressure CVDs: Application of CONTAMINATE Version 2.0
T2 - IEICE TRANSACTIONS on Electronics
SP - 852
EP - 859
AU - Evan WHITBY
AU - Koichi TSUZUKI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - As part of Hitachi's development of clean semiconductor processing equipment, the Fluids Modeling Group of the Mechanical Engineering Research Laboratory is developing a computer model, CONTAMINATE, for simulating contamination of wafers in chemical vapor deposition (CVD) systems. CONTAMINATE is based on a 2D implementation of the SIMPLER algorithm for simulating convection/diffusion transport processes. The new model includes modules for simulating fluid flow, heat transfer, chemical reactions, and gas-phase formation and deposition of clusters and particles. CONTAMINATE outputs property fields and estimates of various film quality indices. Using CONTAMINATE we simulated a SiH₄: O₂: N₂ gas mixture at 300 K flowing over a wafer heated to 700 K. System pressures were varied from 1-100 torr and SiH₄ pressures from 0.1 to 10 torr. Deposition characteristics are in qualitative agreement with actual systems and are summarized as follows: (1) No particles larger than 0.1µm deposited for any of the conditions tested. (2) Film damage occurred above 10 torr, but no damage occurred below 10 torr. (3) Increasing SiH₄ pressure at constant system pressure eliminated particle deposition because particles grew large enought that thermophoresis blocked particle diffusion. (4) Conformal deposition of featured surfaces was achieved only at 1 torr. (5) Film thickness variation over the diameter of the wafer was 15% at 100 torr, 3% at 10 torr, and 1% at 1 torr.
ER -