The motion of particles in low-pressure chemical vapor deposition (LPCVD) (0.4 Torr) equipment has been investigated by a numerical simulation. The effects of wafer orientation, electrostatic forces, and thermophoresis were evaluated. Horizontal surface-down processing and vertical processing can reduce particulate contamination remarkably compared with horizontal surface-up processing. Static electricity control is essential. Weakly charged wafers (several V to several 10 V) can significantly increase submicron particle deposition. In the absence of electrical forces, thermophoresis prevents deposition of particles in the size range 0.03 µmDp0.6 µm, when the temperature difference between the wafer surface and the gas inlet temperature exceeds 100. Deposition of particles smaller than 0.03 µm still occurs by diffusion.

As part of Hitachi's development of clean semiconductor processing equipment, the Fluids Modeling Group of the Mechanical Engineering Research Laboratory is developing a computer model, CONTAMINATE, for simulating contamination of wafers in chemical vapor deposition (CVD) systems. CONTAMINATE is based on a 2D implementation of the SIMPLER algorithm for simulating convection/diffusion transport processes. The new model includes modules for simulating fluid flow, heat transfer, chemical reactions, and gas-phase formation and deposition of clusters and particles. CONTAMINATE outputs property fields and estimates of various film quality indices. Using CONTAMINATE we simulated a SiH4: O2: N2 gas mixture at 300 K flowing over a wafer heated to 700 K. System pressures were varied from 1-100 torr and SiH4 pressures from 0.1 to 10 torr. Deposition characteristics are in qualitative agreement with actual systems and are summarized as follows: (1) No particles larger than 0.1µm deposited for any of the conditions tested. (2) Film damage occurred above 10 torr, but no damage occurred below 10 torr. (3) Increasing SiH4 pressure at constant system pressure eliminated particle deposition because particles grew large enought that thermophoresis blocked particle diffusion. (4) Conformal deposition of featured surfaces was achieved only at 1 torr. (5) Film thickness variation over the diameter of the wafer was 15% at 100 torr, 3% at 10 torr, and 1% at 1 torr.