Contamination Control in Low-Pressure Process Equipment

Koichi TSUZUKI

Contamination Control in Low-Pressure Process Equipment

Koichi TSUZUKI

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The motion of particles in low-pressure chemical vapor deposition (LPCVD) (0.4 Torr) equipment has been investigated by a numerical simulation. The effects of wafer orientation, electrostatic forces, and thermophoresis were evaluated. Horizontal surface-down processing and vertical processing can reduce particulate contamination remarkably compared with horizontal surface-up processing. Static electricity control is essential. Weakly charged wafers (several V to several 10 V) can significantly increase submicron particle deposition. In the absence of electrical forces, thermophoresis prevents deposition of particles in the size range 0.03 µmD_p0.6 µm, when the temperature difference between the wafer surface and the gas inlet temperature exceeds 100. Deposition of particles smaller than 0.03 µm still occurs by diffusion.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.860-865

Publication Date: 1992/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)

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Koichi TSUZUKI, "Contamination Control in Low-Pressure Process Equipment" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 7, pp. 860-865, July 1992, doi: .
Abstract: The motion of particles in low-pressure chemical vapor deposition (LPCVD) (0.4 Torr) equipment has been investigated by a numerical simulation. The effects of wafer orientation, electrostatic forces, and thermophoresis were evaluated. Horizontal surface-down processing and vertical processing can reduce particulate contamination remarkably compared with horizontal surface-up processing. Static electricity control is essential. Weakly charged wafers (several V to several 10 V) can significantly increase submicron particle deposition. In the absence of electrical forces, thermophoresis prevents deposition of particles in the size range 0.03 µmD_p0.6 µm, when the temperature difference between the wafer surface and the gas inlet temperature exceeds 100. Deposition of particles smaller than 0.03 µm still occurs by diffusion.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_860/_p

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@ARTICLE{e75-c_7_860,
author={Koichi TSUZUKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Contamination Control in Low-Pressure Process Equipment},
year={1992},
volume={E75-C},
number={7},
pages={860-865},
abstract={The motion of particles in low-pressure chemical vapor deposition (LPCVD) (0.4 Torr) equipment has been investigated by a numerical simulation. The effects of wafer orientation, electrostatic forces, and thermophoresis were evaluated. Horizontal surface-down processing and vertical processing can reduce particulate contamination remarkably compared with horizontal surface-up processing. Static electricity control is essential. Weakly charged wafers (several V to several 10 V) can significantly increase submicron particle deposition. In the absence of electrical forces, thermophoresis prevents deposition of particles in the size range 0.03 µmD_p0.6 µm, when the temperature difference between the wafer surface and the gas inlet temperature exceeds 100. Deposition of particles smaller than 0.03 µm still occurs by diffusion.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Contamination Control in Low-Pressure Process Equipment
T2 - IEICE TRANSACTIONS on Electronics
SP - 860
EP - 865
AU - Koichi TSUZUKI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - The motion of particles in low-pressure chemical vapor deposition (LPCVD) (0.4 Torr) equipment has been investigated by a numerical simulation. The effects of wafer orientation, electrostatic forces, and thermophoresis were evaluated. Horizontal surface-down processing and vertical processing can reduce particulate contamination remarkably compared with horizontal surface-up processing. Static electricity control is essential. Weakly charged wafers (several V to several 10 V) can significantly increase submicron particle deposition. In the absence of electrical forces, thermophoresis prevents deposition of particles in the size range 0.03 µmD_p0.6 µm, when the temperature difference between the wafer surface and the gas inlet temperature exceeds 100. Deposition of particles smaller than 0.03 µm still occurs by diffusion.
ER -