The motion of particles in low-pressure chemical vapor deposition (LPCVD) (0.4 Torr) equipment has been investigated by a numerical simulation. The effects of wafer orientation, electrostatic forces, and thermophoresis were evaluated. Horizontal surface-down processing and vertical processing can reduce particulate contamination remarkably compared with horizontal surface-up processing. Static electricity control is essential. Weakly charged wafers (several V to several 10 V) can significantly increase submicron particle deposition. In the absence of electrical forces, thermophoresis prevents deposition of particles in the size range 0.03 µmDp0.6 µm, when the temperature difference between the wafer surface and the gas inlet temperature exceeds 100. Deposition of particles smaller than 0.03 µm still occurs by diffusion.