Characterization of Buried Si Atomic Structures by High-Energy Ion Scattering Technique
Summary :
Thin Si films grown on anodized porous silicon have been characterized using a high-energy ion scattering technique with related simulations of MeV ions in solids. It turned out that the simulations are necessary and very usuful for quantitative and nondestractive analysis of thin films with thicknesses less than 100 nm. In the case of the epitaxial Si films examined, it is often insufficient for the characterization of crystalline quality to measure only the channeling minimum yield, and therefore, it is emphasized that angular scans over the critical angle in the vicinity of a channeling direction must be performed for the analysis of possible imperfections in thin films. The possible imperfections observed in the epitaxial specimen are treated quantitatively.
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- IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.1001-1006
- Publication Date
- 1992/09/25
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- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Silicon Devices and Materials)
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Eiji KAMIYA, Jong MOON, Toshimichi ITO, Akio HIRAKI, "Characterization of Buried Si Atomic Structures by High-Energy Ion Scattering Technique" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 9, pp. 1001-1006, September 1992, doi: .
Abstract: Thin Si films grown on anodized porous silicon have been characterized using a high-energy ion scattering technique with related simulations of MeV ions in solids. It turned out that the simulations are necessary and very usuful for quantitative and nondestractive analysis of thin films with thicknesses less than 100 nm. In the case of the epitaxial Si films examined, it is often insufficient for the characterization of crystalline quality to measure only the channeling minimum yield, and therefore, it is emphasized that angular scans over the critical angle in the vicinity of a channeling direction must be performed for the analysis of possible imperfections in thin films. The possible imperfections observed in the epitaxial specimen are treated quantitatively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_1001/_p
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@ARTICLE{e75-c_9_1001,
author={Eiji KAMIYA, Jong MOON, Toshimichi ITO, Akio HIRAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Buried Si Atomic Structures by High-Energy Ion Scattering Technique},
year={1992},
volume={E75-C},
number={9},
pages={1001-1006},
abstract={Thin Si films grown on anodized porous silicon have been characterized using a high-energy ion scattering technique with related simulations of MeV ions in solids. It turned out that the simulations are necessary and very usuful for quantitative and nondestractive analysis of thin films with thicknesses less than 100 nm. In the case of the epitaxial Si films examined, it is often insufficient for the characterization of crystalline quality to measure only the channeling minimum yield, and therefore, it is emphasized that angular scans over the critical angle in the vicinity of a channeling direction must be performed for the analysis of possible imperfections in thin films. The possible imperfections observed in the epitaxial specimen are treated quantitatively.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Characterization of Buried Si Atomic Structures by High-Energy Ion Scattering Technique
T2 - IEICE TRANSACTIONS on Electronics
SP - 1001
EP - 1006
AU - Eiji KAMIYA
AU - Jong MOON
AU - Toshimichi ITO
AU - Akio HIRAKI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - Thin Si films grown on anodized porous silicon have been characterized using a high-energy ion scattering technique with related simulations of MeV ions in solids. It turned out that the simulations are necessary and very usuful for quantitative and nondestractive analysis of thin films with thicknesses less than 100 nm. In the case of the epitaxial Si films examined, it is often insufficient for the characterization of crystalline quality to measure only the channeling minimum yield, and therefore, it is emphasized that angular scans over the critical angle in the vicinity of a channeling direction must be performed for the analysis of possible imperfections in thin films. The possible imperfections observed in the epitaxial specimen are treated quantitatively.
ER -
English
