IEICE TRANSACTIONS on Electronics
Some Considerations of Transient Negative Photoconductivity in Silicon Doped with Gold
Summary :
After the intrinsic pulsed light illumination, a transient negative photoconductivity (TRANP) was observed in silicon doped with gold. The ambient temperature dependence of the TRANP-current was measured and compared with the simulated results obtained by solving rate equations. The temperature dependence of the peak value of the TRANP-current was in agreement with the simulated result. The activation energy of gold acceptor level obtained from the time constant in the recovery process was also consistent with the simulation. It was cleared from this result that the recovery process is dominated by the electron re-emission from gold acceptor level to the conduction band. It was concluded that the occurrence of the TRANP is well explained by using our model proposed before.
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- IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.1036-1042
- Publication Date
- 1992/09/25
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- Type of Manuscript
- Special Section PAPER (Special Issue on Silicon Devices and Materials)
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Hideki KIMURA, Norihisa MATSUMOTO, Koji KANEKO, Yukio AKIBA, Tateki KUROSU, Masamori IIDA, "Some Considerations of Transient Negative Photoconductivity in Silicon Doped with Gold" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 9, pp. 1036-1042, September 1992, doi: .
Abstract: After the intrinsic pulsed light illumination, a transient negative photoconductivity (TRANP) was observed in silicon doped with gold. The ambient temperature dependence of the TRANP-current was measured and compared with the simulated results obtained by solving rate equations. The temperature dependence of the peak value of the TRANP-current was in agreement with the simulated result. The activation energy of gold acceptor level obtained from the time constant in the recovery process was also consistent with the simulation. It was cleared from this result that the recovery process is dominated by the electron re-emission from gold acceptor level to the conduction band. It was concluded that the occurrence of the TRANP is well explained by using our model proposed before.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_1036/_p
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@ARTICLE{e75-c_9_1036,
author={Hideki KIMURA, Norihisa MATSUMOTO, Koji KANEKO, Yukio AKIBA, Tateki KUROSU, Masamori IIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Some Considerations of Transient Negative Photoconductivity in Silicon Doped with Gold},
year={1992},
volume={E75-C},
number={9},
pages={1036-1042},
abstract={After the intrinsic pulsed light illumination, a transient negative photoconductivity (TRANP) was observed in silicon doped with gold. The ambient temperature dependence of the TRANP-current was measured and compared with the simulated results obtained by solving rate equations. The temperature dependence of the peak value of the TRANP-current was in agreement with the simulated result. The activation energy of gold acceptor level obtained from the time constant in the recovery process was also consistent with the simulation. It was cleared from this result that the recovery process is dominated by the electron re-emission from gold acceptor level to the conduction band. It was concluded that the occurrence of the TRANP is well explained by using our model proposed before.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Some Considerations of Transient Negative Photoconductivity in Silicon Doped with Gold
T2 - IEICE TRANSACTIONS on Electronics
SP - 1036
EP - 1042
AU - Hideki KIMURA
AU - Norihisa MATSUMOTO
AU - Koji KANEKO
AU - Yukio AKIBA
AU - Tateki KUROSU
AU - Masamori IIDA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - After the intrinsic pulsed light illumination, a transient negative photoconductivity (TRANP) was observed in silicon doped with gold. The ambient temperature dependence of the TRANP-current was measured and compared with the simulated results obtained by solving rate equations. The temperature dependence of the peak value of the TRANP-current was in agreement with the simulated result. The activation energy of gold acceptor level obtained from the time constant in the recovery process was also consistent with the simulation. It was cleared from this result that the recovery process is dominated by the electron re-emission from gold acceptor level to the conduction band. It was concluded that the occurrence of the TRANP is well explained by using our model proposed before.
ER -
English
