This paper describes logic and analog test schemes that improve the testability of a pixel-parallel fingerprint identification circuit. The pixel contains a processing circuit and a capacitive fingerprint sensor circuit. For the logic test, we propose a test method using a pseudo scan circuit to check the processing circuits of all pixels simultaneously. In the analog test, the sensor circuit employs dummy capacitance to mimic the state of a finger touching the chip. This enables an evaluation of the sensitivity of all sensor circuits on logical LSI tester without touching the chip with a finger. To check the effectiveness of the schemes, we applied them to a pixel array in a fingerprint identification LSI. The pseudo scan circuit achieved a 100% failure-detection rate for the processing circuit. The analog test determines that the sensitivities of the sensor circuit in all pixels are in the proper range. The results of the tests confirmed that the proposed schemes can completely detect defects in the circuits. Thus, the schemes will pave the way to logic and analog tests of chips integrating highly functional devices stacked on a LSI.

We believe the quantum functional device to be a future perspective device, if we solve the problems that it has nowadays. We will summarize such problems with several discussions from the viewpoint of circuit and system.

This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in Parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.

A quantum interconnection scheme by controlling the Coulomb interaction between ballistic electrons is proposed in which 2DEG (2 dimensional electron gas) plays the role of an interconnection medium. This concept brings up new possibilities for the interconnection approach in various fields such as parallel processing, telecommunications switching, and quantum functional devices. Cross-over interconnection, address collision, and address selection in a quantum information network system were analyzed as the first step. The obtained results have shown that the interconnection probability can be controlled by the velocity and timing of the ballistic electron emission from the emitter electrode. The proposed interconnection scheme is expected to open up a new field of quantum effect integrated circuits in the 21st century.

We have developed a new functional MOS transistor called Neuron MOSFET (abbreviated as neuMOS or νMOS) which simulates the function of biological neurons. The new transistor is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of weighted summation, all in the voltage mode at a single transistor level. By utilizing its neuron-like very powerful functional capability, various circuits essential for multiple-valued logic operation have been designed using quite simple circuit configurations. The circuit designs for data conversion between the multivalued and binary logic systems and for generating universal literal functions are described and their experimental verifications are presented. One of the most important features of νMOS multivalued lagic circuit is that the circuit operates basically in the voltage mode, thus greatly reducing the power dissipation as compared to the conventional current mode circuitry. This is indeed most essential in implementing multivalued logic systems in ultra large scale integration. Another important feature of νMOS design is in its flexibility of implementing logic functions. The functional form of a universal literal function, for instance, can be arbitrarily altered by external signals without any modifications in its hardware configuration. A circuit representing multiple-valued multithreshold functions is also proposed.

After the intrinsic pulsed light illumination, a transient negative photoconductivity (TRANP) was observed in silicon doped with gold. The ambient temperature dependence of the TRANP-current was measured and compared with the simulated results obtained by solving rate equations. The temperature dependence of the peak value of the TRANP-current was in agreement with the simulated result. The activation energy of gold acceptor level obtained from the time constant in the recovery process was also consistent with the simulation. It was cleared from this result that the recovery process is dominated by the electron re-emission from gold acceptor level to the conduction band. It was concluded that the occurrence of the TRANP is well explained by using our model proposed before.