IEICE TRANSACTIONS on Electronics
Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs
Summary :
This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in Parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.11 pp.1515-1524
- Publication Date
- 1996/11/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Category
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Kevin Jing CHEN, Koichi MAEZAWA, Takao WAHO, Masafumi YAMAMOTO, "Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 11, pp. 1515-1524, November 1996, doi: .
Abstract: This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in Parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_11_1515/_p
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@ARTICLE{e79-c_11_1515,
author={Kevin Jing CHEN, Koichi MAEZAWA, Takao WAHO, Masafumi YAMAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs},
year={1996},
volume={E79-C},
number={11},
pages={1515-1524},
abstract={This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in Parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.},
keywords={},
doi={},
ISSN={},
month={November},}
Copy
TY - JOUR
TI - Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1515
EP - 1524
AU - Kevin Jing CHEN
AU - Koichi MAEZAWA
AU - Takao WAHO
AU - Masafumi YAMAMOTO
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1996
AB - This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in Parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.
ER -
English
