This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in Parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.

A quantum interconnection scheme by controlling the Coulomb interaction between ballistic electrons is proposed in which 2DEG (2 dimensional electron gas) plays the role of an interconnection medium. This concept brings up new possibilities for the interconnection approach in various fields such as parallel processing, telecommunications switching, and quantum functional devices. Cross-over interconnection, address collision, and address selection in a quantum information network system were analyzed as the first step. The obtained results have shown that the interconnection probability can be controlled by the velocity and timing of the ballistic electron emission from the emitter electrode. The proposed interconnection scheme is expected to open up a new field of quantum effect integrated circuits in the 21st century.