This paper describes a speed-oriented ultralow-voltage and low-power SOI circuit technique based on a differential enhancement- and depletion-mode (ED)-MOS circuit. Combining an ED-MOS circuit block for critical paths and a multi-Vth CMOS circuit block for noncritical paths, that is, the so-called differential ED-CMOS/SOI circuit, makes it possible to achieve low-power and ultrahigh-speed operation of over 1 GHz at a supply voltage of less than 0.5 V. As two applications of the differential ED-CMOS/SOI circuit, a multi-stage frequency divider that uses the ED-MOS circuit in a first-stage frequency divider and a pipelined adder with a CMOS pipeline register are described in detail. To verify the effectiveness of the ED-CMOS/SOI circuit scheme, we fabricated a 1/8 frequency divider and a 32-bit binary look-ahead carry (BLC) adder using the 0.25-µm MTCMOS/SOI process. The frequency divider operates down to 0.3 V with a maximum operating frequency of 3.6 GHz while suppressing power dissipation to 0.3 mW. The 32-bit adder operates at a frequency of 1 GHz at 0.5 V.

This paper describes logic and analog test schemes that improve the testability of a pixel-parallel fingerprint identification circuit. The pixel contains a processing circuit and a capacitive fingerprint sensor circuit. For the logic test, we propose a test method using a pseudo scan circuit to check the processing circuits of all pixels simultaneously. In the analog test, the sensor circuit employs dummy capacitance to mimic the state of a finger touching the chip. This enables an evaluation of the sensitivity of all sensor circuits on logical LSI tester without touching the chip with a finger. To check the effectiveness of the schemes, we applied them to a pixel array in a fingerprint identification LSI. The pseudo scan circuit achieved a 100% failure-detection rate for the processing circuit. The analog test determines that the sensitivities of the sensor circuit in all pixels are in the proper range. The results of the tests confirmed that the proposed schemes can completely detect defects in the circuits. Thus, the schemes will pave the way to logic and analog tests of chips integrating highly functional devices stacked on a LSI.

This paper presents fingerprint image enhancement and rotation schemes that improve the identification accuracy with the pixel-parallel processing of pixels. In the schemes, the range of the fingerprint sensor is adjusted to the finger state, the captured image is retouched to obtain the suitable image for identification, and the image is rotated to the correct angle on the pixel array. Sensor and pixel circuits that provide these operations were devised and a test chip was fabricated using 0.25-µm CMOS and the sensor process. It was confirmed in 150,000 identification tests that the schemes reduce the false rejection rate to 6.17% from 30.59%, when the false acceptance rate is 0.1%.

This paper describes an adaptive fingerprint-sensing scheme for a user authentication system with a fingerprint sensor LSI to obtain high-quality fingerprint images suitable for identification. The scheme is based on novel evaluation indexes of fingerprint-image quality and adjustable analog-to-digital (A/D) conversion. The scheme adjusts dynamically an A/D conversion range of the fingerprint sensor LSI while evaluating the image quality during real-time fingerprint-sensing operation. The evaluation indexes pertain to the contrast and the ridgelines of a fingerprint image. The A/D conversion range is adjusted by changing quantization resolution and offset. We developed a fingerprint sensor LSI and a user authentication system to evaluate the adaptive fingerprint-sensing scheme. The scheme obtained a fingerprint image suitable for identification and the system achieved an accurate identification rate with 0.36% of the false rejection rate (FRR) at 0.075% of the false acceptance rate (FAR). This confirms that the scheme is very effective in achieving accurate identification.

This paper describes the effect of lowering the supply voltage and threshold voltages on the energy reduction of an ultralow-voltage multi-threshold CMOS/SIMOX (MTCMOS/SIMOX) circuit. The energy dissipation is evaluated using a graph with equispeed and equienergy lines on a supply voltage and a threshold voltage plane. In order to draw equispeed and equienergy lines for ultralow-voltage circuits, we propose a modified energy-evaluation model taking into account a input-waveform transition-time of the circuits. The validity of the proposed energy-evaluation model is confirmed by the evaluation of a gate-chain TEG and a 16-bit CLA adder fabricated with 0.25-µm MTCMOS/SIMOX technology. Using the modified model, the energy-reduction effect in lowering the supply voltage is evaluated for a single-Vth fully-depleted CMOS/SOI circuit, a dual-Vth CMOS circuit consisting of fully-depleted low- and medium-Vth MOSFETs, and a triple-Vth MTCMOS/SIMOX circuit. The evaluation reveals that lowering the supply voltage of the MTCMOS/SIMOX circuit to 0.5 V is advantageous for the energy reduction at a constant operating speed.

A new threshold circuit technique is proposed for a vibration sensing circuit that operates at a nanowatt power level. The sensing circuits that use sample-and-hold require a clock signal, and they consume power to generate a signal. In the use of a Schmitt trigger circuit that does not use a clock signal, a sink current flows when thresholding the analog signal output. The requirements for millimeter-sized wireless sensor nodes are an average power on the order of a nanowatt and a signal transition time of less than 1 ms. To meet these requirements, our circuit limits the sink current with a nanoampere-level current source. The chattering caused by current limiting is suppressed by feeding back the change in output voltage to the limiting current. The increase in the signal transition time that is caused by current limiting is reduced by accelerating the discharge of the load capacitance. For a test chip fabricated in the 0.35-µm CMOS process, the proposed threshold circuits operate without chattering and the average powers are 0.7-3 nW. The signal transition times are estimated in a circuit simulation to be 65-97 µs. The proposed circuit has 1/150th the power-delay product with no time interval of the sensing operation under the condition that the time interval is 1s. These results indicate that, the proposed threshold circuits are suitable for vibration sensing in millimeter-sized wireless sensor nodes.

The design and performance of a sub-nanoampere two-stage power management circuit that uses off-chip capacitors for energy accumulation are presented. Focusing on the leakage current and the transition time of the power switch transistor, we estimated the minimum current for accumulating. On the basis of the results, we devised a two-stage power management architecture for sub-nanoampere operation. The simulated and experimental results for the power management circuit describe the accumulating operation with a 1-nA current source.