IEICE TRANSACTIONS on Electronics
Evaluation of Surface Damage on a Silicon Wafer Induced by Reactive Ion Etching Using X-Ray Photoeloctron Spectroscopy and Electrical Characteristics
Summary :
Surface damage to n-type silicon wafers induced by Reactive Ion Etching (RIE) with CF4 gas was evaluated using X-ray photoelectron spectroscopy (XPS) and the current-voltage (I-V) characteristics of Au/n-Si Schottky diodes fabricated on the damaged surface. The reaction products (SiF, SiF2, and SiF3) in the damaged layer were detected by XPS. Assuming the surface damage on a silicon wafer induced by RIE acts as a donor, the donor density was found to be about 2
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.990-994
- Publication Date
- 1992/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Silicon Devices and Materials)
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Akitaka MURATA, Morio NAKAMURA, Akira ASAI, Ichiro TANIGUCHI, "Evaluation of Surface Damage on a Silicon Wafer Induced by Reactive Ion Etching Using X-Ray Photoeloctron Spectroscopy and Electrical Characteristics" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 9, pp. 990-994, September 1992, doi: .
Abstract: Surface damage to n-type silicon wafers induced by Reactive Ion Etching (RIE) with CF4 gas was evaluated using X-ray photoelectron spectroscopy (XPS) and the current-voltage (I-V) characteristics of Au/n-Si Schottky diodes fabricated on the damaged surface. The reaction products (SiF, SiF2, and SiF3) in the damaged layer were detected by XPS. Assuming the surface damage on a silicon wafer induced by RIE acts as a donor, the donor density was found to be about 2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_990/_p
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@ARTICLE{e75-c_9_990,
author={Akitaka MURATA, Morio NAKAMURA, Akira ASAI, Ichiro TANIGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Evaluation of Surface Damage on a Silicon Wafer Induced by Reactive Ion Etching Using X-Ray Photoeloctron Spectroscopy and Electrical Characteristics},
year={1992},
volume={E75-C},
number={9},
pages={990-994},
abstract={Surface damage to n-type silicon wafers induced by Reactive Ion Etching (RIE) with CF4 gas was evaluated using X-ray photoelectron spectroscopy (XPS) and the current-voltage (I-V) characteristics of Au/n-Si Schottky diodes fabricated on the damaged surface. The reaction products (SiF, SiF2, and SiF3) in the damaged layer were detected by XPS. Assuming the surface damage on a silicon wafer induced by RIE acts as a donor, the donor density was found to be about 2
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Evaluation of Surface Damage on a Silicon Wafer Induced by Reactive Ion Etching Using X-Ray Photoeloctron Spectroscopy and Electrical Characteristics
T2 - IEICE TRANSACTIONS on Electronics
SP - 990
EP - 994
AU - Akitaka MURATA
AU - Morio NAKAMURA
AU - Akira ASAI
AU - Ichiro TANIGUCHI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - Surface damage to n-type silicon wafers induced by Reactive Ion Etching (RIE) with CF4 gas was evaluated using X-ray photoelectron spectroscopy (XPS) and the current-voltage (I-V) characteristics of Au/n-Si Schottky diodes fabricated on the damaged surface. The reaction products (SiF, SiF2, and SiF3) in the damaged layer were detected by XPS. Assuming the surface damage on a silicon wafer induced by RIE acts as a donor, the donor density was found to be about 2
ER -
English
