Minority Carrier Collection in 256 M-bit DRAM Cell on Incidence of Alpha-Particle Analyzed by Three-Dimensional Device Simulation
Summary :
We studied minority carrier collection in high-density stacked-capacitor DRAM cells using a three-dimensional device simulator. We estimated the collected charge for incident angle, location, and junction size and showed that, compared to the conventional structure by a twin-well process, an n-well-guarded cell array fabricated using a triple-well process effectively reduced the charge injected into cells. The reduction was because the n-well absorbed most of the electrons. A so-called "size-effect" did exist and smaller junctions performed better. We concluded that storage capacitance in a 256 M-bit DRAM cell could be reduced, compared to that in previous devices, which would, in turn, help reduce costs in fabricating high-density DRAM.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.11 pp.1604-1610
- Publication Date
- 1993/11/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on LSI Memories)
- Category
- DRAM
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Sumiko OSHIDA, Masao TAGUCHI, "Minority Carrier Collection in 256 M-bit DRAM Cell on Incidence of Alpha-Particle Analyzed by Three-Dimensional Device Simulation" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 11, pp. 1604-1610, November 1993, doi: .
Abstract: We studied minority carrier collection in high-density stacked-capacitor DRAM cells using a three-dimensional device simulator. We estimated the collected charge for incident angle, location, and junction size and showed that, compared to the conventional structure by a twin-well process, an n-well-guarded cell array fabricated using a triple-well process effectively reduced the charge injected into cells. The reduction was because the n-well absorbed most of the electrons. A so-called "size-effect" did exist and smaller junctions performed better. We concluded that storage capacitance in a 256 M-bit DRAM cell could be reduced, compared to that in previous devices, which would, in turn, help reduce costs in fabricating high-density DRAM.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_11_1604/_p
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@ARTICLE{e76-c_11_1604,
author={Sumiko OSHIDA, Masao TAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Minority Carrier Collection in 256 M-bit DRAM Cell on Incidence of Alpha-Particle Analyzed by Three-Dimensional Device Simulation},
year={1993},
volume={E76-C},
number={11},
pages={1604-1610},
abstract={We studied minority carrier collection in high-density stacked-capacitor DRAM cells using a three-dimensional device simulator. We estimated the collected charge for incident angle, location, and junction size and showed that, compared to the conventional structure by a twin-well process, an n-well-guarded cell array fabricated using a triple-well process effectively reduced the charge injected into cells. The reduction was because the n-well absorbed most of the electrons. A so-called "size-effect" did exist and smaller junctions performed better. We concluded that storage capacitance in a 256 M-bit DRAM cell could be reduced, compared to that in previous devices, which would, in turn, help reduce costs in fabricating high-density DRAM.},
keywords={},
doi={},
ISSN={},
month={November},}
Copy
TY - JOUR
TI - Minority Carrier Collection in 256 M-bit DRAM Cell on Incidence of Alpha-Particle Analyzed by Three-Dimensional Device Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1604
EP - 1610
AU - Sumiko OSHIDA
AU - Masao TAGUCHI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1993
AB - We studied minority carrier collection in high-density stacked-capacitor DRAM cells using a three-dimensional device simulator. We estimated the collected charge for incident angle, location, and junction size and showed that, compared to the conventional structure by a twin-well process, an n-well-guarded cell array fabricated using a triple-well process effectively reduced the charge injected into cells. The reduction was because the n-well absorbed most of the electrons. A so-called "size-effect" did exist and smaller junctions performed better. We concluded that storage capacitance in a 256 M-bit DRAM cell could be reduced, compared to that in previous devices, which would, in turn, help reduce costs in fabricating high-density DRAM.
ER -
English
