IEICE TRANSACTIONS on Electronics
A High-Density Multiple-Valued Content-Addressable Memory Based on One Transistor Cell
Summary :
This paper presents a high-density multiple-valued content-addressable memory (MVCAM) based on a floating-gate MOS device. In the proposed CAM, a basic operation performed in each cell is a threshold function that is a kind of inverter whose threshold value is programmable. Various multiple-valued operations for data retrieval can be easily performed using threshold functions. Moreover, each cell circuit in the MVCAM can be implemented using only a single floating-gate MOS transistor. As a result, the cell area of the four-valued CAM are reduced to 37% in comparison with that of the conventional dynamic CAM cell.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.11 pp.1649-1656
- Publication Date
- 1993/11/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on LSI Memories)
- Category
- Application Specific Memory
Authors
Keyword
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Satoshi ARAGAKI, Takahiro HANYU, Tatsuo HIGUCHI, "A High-Density Multiple-Valued Content-Addressable Memory Based on One Transistor Cell" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 11, pp. 1649-1656, November 1993, doi: .
Abstract: This paper presents a high-density multiple-valued content-addressable memory (MVCAM) based on a floating-gate MOS device. In the proposed CAM, a basic operation performed in each cell is a threshold function that is a kind of inverter whose threshold value is programmable. Various multiple-valued operations for data retrieval can be easily performed using threshold functions. Moreover, each cell circuit in the MVCAM can be implemented using only a single floating-gate MOS transistor. As a result, the cell area of the four-valued CAM are reduced to 37% in comparison with that of the conventional dynamic CAM cell.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_11_1649/_p
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@ARTICLE{e76-c_11_1649,
author={Satoshi ARAGAKI, Takahiro HANYU, Tatsuo HIGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A High-Density Multiple-Valued Content-Addressable Memory Based on One Transistor Cell},
year={1993},
volume={E76-C},
number={11},
pages={1649-1656},
abstract={This paper presents a high-density multiple-valued content-addressable memory (MVCAM) based on a floating-gate MOS device. In the proposed CAM, a basic operation performed in each cell is a threshold function that is a kind of inverter whose threshold value is programmable. Various multiple-valued operations for data retrieval can be easily performed using threshold functions. Moreover, each cell circuit in the MVCAM can be implemented using only a single floating-gate MOS transistor. As a result, the cell area of the four-valued CAM are reduced to 37% in comparison with that of the conventional dynamic CAM cell.},
keywords={},
doi={},
ISSN={},
month={November},}
Copy
TY - JOUR
TI - A High-Density Multiple-Valued Content-Addressable Memory Based on One Transistor Cell
T2 - IEICE TRANSACTIONS on Electronics
SP - 1649
EP - 1656
AU - Satoshi ARAGAKI
AU - Takahiro HANYU
AU - Tatsuo HIGUCHI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1993
AB - This paper presents a high-density multiple-valued content-addressable memory (MVCAM) based on a floating-gate MOS device. In the proposed CAM, a basic operation performed in each cell is a threshold function that is a kind of inverter whose threshold value is programmable. Various multiple-valued operations for data retrieval can be easily performed using threshold functions. Moreover, each cell circuit in the MVCAM can be implemented using only a single floating-gate MOS transistor. As a result, the cell area of the four-valued CAM are reduced to 37% in comparison with that of the conventional dynamic CAM cell.
ER -
English
