IEICE TRANSACTIONS on Electronics
Calculation of the Potential Distribution around an Impurity-Atom-Wire--The Validity of the Thomas-Fermi Approximation--
Summary :
The potential distribution around a linear array of donor atoms in a semiconductor crystal is calculated, approximating the linear array by a continuous line charge. Two methods are used for the analysis. One is the self-consistent calculation of Poisson's equation and the effective mass Schrödinger's equation, and the other is the Thomas-Fermi approximation. Results of both methods agree very well, and it is shown that it is possible to form a potential distribution as fine as the electron wavelength by appropriate arrangement of the impurity atoms. Arrays of impurity atoms therefore can act as buiding elements for future electron wave devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.12 pp.1842-1846
- Publication Date
- 1993/12/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
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Tomonori SEKIGUCHI, Kazuhito FURUYA, "Calculation of the Potential Distribution around an Impurity-Atom-Wire--The Validity of the Thomas-Fermi Approximation--" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 12, pp. 1842-1846, December 1993, doi: .
Abstract: The potential distribution around a linear array of donor atoms in a semiconductor crystal is calculated, approximating the linear array by a continuous line charge. Two methods are used for the analysis. One is the self-consistent calculation of Poisson's equation and the effective mass Schrödinger's equation, and the other is the Thomas-Fermi approximation. Results of both methods agree very well, and it is shown that it is possible to form a potential distribution as fine as the electron wavelength by appropriate arrangement of the impurity atoms. Arrays of impurity atoms therefore can act as buiding elements for future electron wave devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_12_1842/_p
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@ARTICLE{e76-c_12_1842,
author={Tomonori SEKIGUCHI, Kazuhito FURUYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Calculation of the Potential Distribution around an Impurity-Atom-Wire--The Validity of the Thomas-Fermi Approximation--},
year={1993},
volume={E76-C},
number={12},
pages={1842-1846},
abstract={The potential distribution around a linear array of donor atoms in a semiconductor crystal is calculated, approximating the linear array by a continuous line charge. Two methods are used for the analysis. One is the self-consistent calculation of Poisson's equation and the effective mass Schrödinger's equation, and the other is the Thomas-Fermi approximation. Results of both methods agree very well, and it is shown that it is possible to form a potential distribution as fine as the electron wavelength by appropriate arrangement of the impurity atoms. Arrays of impurity atoms therefore can act as buiding elements for future electron wave devices.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - Calculation of the Potential Distribution around an Impurity-Atom-Wire--The Validity of the Thomas-Fermi Approximation--
T2 - IEICE TRANSACTIONS on Electronics
SP - 1842
EP - 1846
AU - Tomonori SEKIGUCHI
AU - Kazuhito FURUYA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1993
AB - The potential distribution around a linear array of donor atoms in a semiconductor crystal is calculated, approximating the linear array by a continuous line charge. Two methods are used for the analysis. One is the self-consistent calculation of Poisson's equation and the effective mass Schrödinger's equation, and the other is the Thomas-Fermi approximation. Results of both methods agree very well, and it is shown that it is possible to form a potential distribution as fine as the electron wavelength by appropriate arrangement of the impurity atoms. Arrays of impurity atoms therefore can act as buiding elements for future electron wave devices.
ER -
English
