Si MIS Solar Cells by Anodization

Junji NANJO; Kamal Abu Hena MOSTAFA; Kiyoyasu TAKADA; Yutaka KOBAYASHI; Toshihide MIYAZAKI; Shigeru NOMURA

Si MIS Solar Cells by Anodization

Junji NANJO, Kamal Abu Hena MOSTAFA, Kiyoyasu TAKADA, Yutaka KOBAYASHI, Toshihide MIYAZAKI, Shigeru NOMURA

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Formation of thin insulating SiO₂ films by anodic oxidation of silicon was studied as a part of investigating an alternative method of fabricating low-cost silicon MIS solar cells. Anodization in the constant-voltage mode was carried out in nonaqueous ethylene glycol solution. The film thickness was carefully measured using an ellipsometer of wavelength 6238 . MIS cell performance was evaluated by comparing the open circuit voltage V_OC and the short circuit current density I_SC with those of the bare Schottky cell (without anodization) under illumination by a tungsten lamp. It was found that anodization in the constant-voltage mode can increase V_OC without reducing I_SC, and that anodization in the constant-voltage mode is more controllable and reproducible. The optimun formation voltage which gives the maximum V_OC of the MIS cell depends on the forming voltage of oxide. A brief discussion on the mechanism for V_OC increase is given.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.1 pp.136-141

Publication Date: 1993/01/25

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Type of Manuscript: PAPER

Category: Opto-Electronics

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Junji NANJO, Kamal Abu Hena MOSTAFA, Kiyoyasu TAKADA, Yutaka KOBAYASHI, Toshihide MIYAZAKI, Shigeru NOMURA, "Si MIS Solar Cells by Anodization" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 1, pp. 136-141, January 1993, doi: .
Abstract: Formation of thin insulating SiO₂ films by anodic oxidation of silicon was studied as a part of investigating an alternative method of fabricating low-cost silicon MIS solar cells. Anodization in the constant-voltage mode was carried out in nonaqueous ethylene glycol solution. The film thickness was carefully measured using an ellipsometer of wavelength 6238 . MIS cell performance was evaluated by comparing the open circuit voltage V_OC and the short circuit current density I_SC with those of the bare Schottky cell (without anodization) under illumination by a tungsten lamp. It was found that anodization in the constant-voltage mode can increase V_OC without reducing I_SC, and that anodization in the constant-voltage mode is more controllable and reproducible. The optimun formation voltage which gives the maximum V_OC of the MIS cell depends on the forming voltage of oxide. A brief discussion on the mechanism for V_OC increase is given.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_1_136/_p

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@ARTICLE{e76-c_1_136,
author={Junji NANJO, Kamal Abu Hena MOSTAFA, Kiyoyasu TAKADA, Yutaka KOBAYASHI, Toshihide MIYAZAKI, Shigeru NOMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Si MIS Solar Cells by Anodization},
year={1993},
volume={E76-C},
number={1},
pages={136-141},
abstract={Formation of thin insulating SiO₂ films by anodic oxidation of silicon was studied as a part of investigating an alternative method of fabricating low-cost silicon MIS solar cells. Anodization in the constant-voltage mode was carried out in nonaqueous ethylene glycol solution. The film thickness was carefully measured using an ellipsometer of wavelength 6238 . MIS cell performance was evaluated by comparing the open circuit voltage V_OC and the short circuit current density I_SC with those of the bare Schottky cell (without anodization) under illumination by a tungsten lamp. It was found that anodization in the constant-voltage mode can increase V_OC without reducing I_SC, and that anodization in the constant-voltage mode is more controllable and reproducible. The optimun formation voltage which gives the maximum V_OC of the MIS cell depends on the forming voltage of oxide. A brief discussion on the mechanism for V_OC increase is given.},
keywords={},
doi={},
ISSN={},
month={January},}

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TY - JOUR
TI - Si MIS Solar Cells by Anodization
T2 - IEICE TRANSACTIONS on Electronics
SP - 136
EP - 141
AU - Junji NANJO
AU - Kamal Abu Hena MOSTAFA
AU - Kiyoyasu TAKADA
AU - Yutaka KOBAYASHI
AU - Toshihide MIYAZAKI
AU - Shigeru NOMURA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1993
AB - Formation of thin insulating SiO₂ films by anodic oxidation of silicon was studied as a part of investigating an alternative method of fabricating low-cost silicon MIS solar cells. Anodization in the constant-voltage mode was carried out in nonaqueous ethylene glycol solution. The film thickness was carefully measured using an ellipsometer of wavelength 6238 . MIS cell performance was evaluated by comparing the open circuit voltage V_OC and the short circuit current density I_SC with those of the bare Schottky cell (without anodization) under illumination by a tungsten lamp. It was found that anodization in the constant-voltage mode can increase V_OC without reducing I_SC, and that anodization in the constant-voltage mode is more controllable and reproducible. The optimun formation voltage which gives the maximum V_OC of the MIS cell depends on the forming voltage of oxide. A brief discussion on the mechanism for V_OC increase is given.
ER -