Multi-Step Function MOS Transistor Circuits
Summary :
This paper describes operating characteristics of a new device named multi-step function MOS transistor (MSF MOSFET) which has stair-shaped I-V curve caused by a stairshaped gap between drain and gate. A quantizing inverter is obtained by using only a single MSF MOSFET as a coupling element of an emitter common amplifier. A pair of the quantizing inverters whose input and output are cross-coupled to each other has multi-stable states. This multiple-valued (MV) flip-flop is available for MV registers and MV memories whose states are changeable by an analog input voltage.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.3 pp.357-363
- Publication Date
- 1993/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Multiple-Valued Integrated Circuits)
- Category
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Shinji KARASAWA, Kazuhiko YAMANOUCHI, "Multi-Step Function MOS Transistor Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 3, pp. 357-363, March 1993, doi: .
Abstract: This paper describes operating characteristics of a new device named multi-step function MOS transistor (MSF MOSFET) which has stair-shaped I-V curve caused by a stairshaped gap between drain and gate. A quantizing inverter is obtained by using only a single MSF MOSFET as a coupling element of an emitter common amplifier. A pair of the quantizing inverters whose input and output are cross-coupled to each other has multi-stable states. This multiple-valued (MV) flip-flop is available for MV registers and MV memories whose states are changeable by an analog input voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_3_357/_p
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@ARTICLE{e76-c_3_357,
author={Shinji KARASAWA, Kazuhiko YAMANOUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Multi-Step Function MOS Transistor Circuits},
year={1993},
volume={E76-C},
number={3},
pages={357-363},
abstract={This paper describes operating characteristics of a new device named multi-step function MOS transistor (MSF MOSFET) which has stair-shaped I-V curve caused by a stairshaped gap between drain and gate. A quantizing inverter is obtained by using only a single MSF MOSFET as a coupling element of an emitter common amplifier. A pair of the quantizing inverters whose input and output are cross-coupled to each other has multi-stable states. This multiple-valued (MV) flip-flop is available for MV registers and MV memories whose states are changeable by an analog input voltage.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - Multi-Step Function MOS Transistor Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 357
EP - 363
AU - Shinji KARASAWA
AU - Kazuhiko YAMANOUCHI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1993
AB - This paper describes operating characteristics of a new device named multi-step function MOS transistor (MSF MOSFET) which has stair-shaped I-V curve caused by a stairshaped gap between drain and gate. A quantizing inverter is obtained by using only a single MSF MOSFET as a coupling element of an emitter common amplifier. A pair of the quantizing inverters whose input and output are cross-coupled to each other has multi-stable states. This multiple-valued (MV) flip-flop is available for MV registers and MV memories whose states are changeable by an analog input voltage.
ER -
English
