IEICE TRANSACTIONS on Electronics
Low-Temperature Reactive Ion Etching for Multi-Layer Resist
Summary :
The effects of low temperature etching for sub-half micron multi-layer resist are investigated. The low temperature etching with pure O2 gas provides higher anisotropic profiles than with an additional gas such as Cl2, N2. This is caused by the difference in the formative process of the side wall protection. With pure O2 gas at
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.4 pp.607-612
- Publication Date
- 1993/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Category
- Process Technology
Authors
Keyword
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Tetsuo SATO, Tomoaki ISHIDA, Masahiro YONEDA, Kazuo NAKAMOTO, "Low-Temperature Reactive Ion Etching for Multi-Layer Resist" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 4, pp. 607-612, April 1993, doi: .
Abstract: The effects of low temperature etching for sub-half micron multi-layer resist are investigated. The low temperature etching with pure O2 gas provides higher anisotropic profiles than with an additional gas such as Cl2, N2. This is caused by the difference in the formative process of the side wall protection. With pure O2 gas at
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_4_607/_p
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@ARTICLE{e76-c_4_607,
author={Tetsuo SATO, Tomoaki ISHIDA, Masahiro YONEDA, Kazuo NAKAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Reactive Ion Etching for Multi-Layer Resist},
year={1993},
volume={E76-C},
number={4},
pages={607-612},
abstract={The effects of low temperature etching for sub-half micron multi-layer resist are investigated. The low temperature etching with pure O2 gas provides higher anisotropic profiles than with an additional gas such as Cl2, N2. This is caused by the difference in the formative process of the side wall protection. With pure O2 gas at
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Low-Temperature Reactive Ion Etching for Multi-Layer Resist
T2 - IEICE TRANSACTIONS on Electronics
SP - 607
EP - 612
AU - Tetsuo SATO
AU - Tomoaki ISHIDA
AU - Masahiro YONEDA
AU - Kazuo NAKAMOTO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1993
AB - The effects of low temperature etching for sub-half micron multi-layer resist are investigated. The low temperature etching with pure O2 gas provides higher anisotropic profiles than with an additional gas such as Cl2, N2. This is caused by the difference in the formative process of the side wall protection. With pure O2 gas at
ER -
English
