Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances

Yasushi ITOH; Tadashi TAKAGI; Hiroyuki MASUNO; Masaki KOHNO; Tsutomu HASHIMOTO

Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances

Yasushi ITOH, Tadashi TAKAGI, Hiroyuki MASUNO, Masaki KOHNO, Tsutomu HASHIMOTO

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A wideband high power amplifier design using a novel band-pass filter with FET's parasitic reactances has been developed. The feature of this design is in that it can provide wide bandwidth and high gain of high power amplifiers. Furthermore, the lower cutoff frequency and bandwidth can be varied independently. With the use of this design, a Ku-band two-stage high power amplifier having a bandwidth of 18% has achieved a linear gain of 9.751.75 dB, a saturated output power of greater than 37 dBm, and a power-added efficiency of greater than 10.4%.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.6 pp.938-943

Publication Date: 1993/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)

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Yasushi ITOH, Tadashi TAKAGI, Hiroyuki MASUNO, Masaki KOHNO, Tsutomu HASHIMOTO, "Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 6, pp. 938-943, June 1993, doi: .
Abstract: A wideband high power amplifier design using a novel band-pass filter with FET's parasitic reactances has been developed. The feature of this design is in that it can provide wide bandwidth and high gain of high power amplifiers. Furthermore, the lower cutoff frequency and bandwidth can be varied independently. With the use of this design, a Ku-band two-stage high power amplifier having a bandwidth of 18% has achieved a linear gain of 9.751.75 dB, a saturated output power of greater than 37 dBm, and a power-added efficiency of greater than 10.4%.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_6_938/_p

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@ARTICLE{e76-c_6_938,
author={Yasushi ITOH, Tadashi TAKAGI, Hiroyuki MASUNO, Masaki KOHNO, Tsutomu HASHIMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances},
year={1993},
volume={E76-C},
number={6},
pages={938-943},
abstract={A wideband high power amplifier design using a novel band-pass filter with FET's parasitic reactances has been developed. The feature of this design is in that it can provide wide bandwidth and high gain of high power amplifiers. Furthermore, the lower cutoff frequency and bandwidth can be varied independently. With the use of this design, a Ku-band two-stage high power amplifier having a bandwidth of 18% has achieved a linear gain of 9.751.75 dB, a saturated output power of greater than 37 dBm, and a power-added efficiency of greater than 10.4%.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances
T2 - IEICE TRANSACTIONS on Electronics
SP - 938
EP - 943
AU - Yasushi ITOH
AU - Tadashi TAKAGI
AU - Hiroyuki MASUNO
AU - Masaki KOHNO
AU - Tsutomu HASHIMOTO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1993
AB - A wideband high power amplifier design using a novel band-pass filter with FET's parasitic reactances has been developed. The feature of this design is in that it can provide wide bandwidth and high gain of high power amplifiers. Furthermore, the lower cutoff frequency and bandwidth can be varied independently. With the use of this design, a Ku-band two-stage high power amplifier having a bandwidth of 18% has achieved a linear gain of 9.751.75 dB, a saturated output power of greater than 37 dBm, and a power-added efficiency of greater than 10.4%.
ER -