Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications

Norio GOTO; Nobuyuki HAYAMA; Hideki TAKAHASHI; Kazuhiko HONJO

Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications

Norio GOTO, Nobuyuki HAYAMA, Hideki TAKAHASHI, Kazuhiko HONJO

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This paper describes the performance of AlGaAs/GaAs HBT's developed for power applications. Their applicability to power amplifiers used in digital mobile radio communications is examined through measurement and numerical simulation, considering both power capability and linearity. Power HBT's with carbon-doped base layers showed DC current gains over 90. A linear gain of 19.2 dB, a maximum output RF power of 32.5 dBm, and a power added efficiency of 56 percent were obtained at 950 MHz. Numerical simulations showed that the power efficiency of HBT amplifiers could be improved by using harmonic trap circuits. Intermodulation measurements showed that third-order distortions were at most 21 dBc level at the 1-dB gain compression point. RF spectrum simulations using π/4 shift QPSK modulation showed that side-band spectrum generation was less than 45 dBc level at points 50 kHz off of the carrier frequency. These properties indicate that the power handling capabilities and linearity of HBT amplifiers offer promising potentials for digital mobile radio communications.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.9 pp.1367-1372

Publication Date: 1993/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices)

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Norio GOTO, Nobuyuki HAYAMA, Hideki TAKAHASHI, Kazuhiko HONJO, "Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 9, pp. 1367-1372, September 1993, doi: .
Abstract: This paper describes the performance of AlGaAs/GaAs HBT's developed for power applications. Their applicability to power amplifiers used in digital mobile radio communications is examined through measurement and numerical simulation, considering both power capability and linearity. Power HBT's with carbon-doped base layers showed DC current gains over 90. A linear gain of 19.2 dB, a maximum output RF power of 32.5 dBm, and a power added efficiency of 56 percent were obtained at 950 MHz. Numerical simulations showed that the power efficiency of HBT amplifiers could be improved by using harmonic trap circuits. Intermodulation measurements showed that third-order distortions were at most 21 dBc level at the 1-dB gain compression point. RF spectrum simulations using π/4 shift QPSK modulation showed that side-band spectrum generation was less than 45 dBc level at points 50 kHz off of the carrier frequency. These properties indicate that the power handling capabilities and linearity of HBT amplifiers offer promising potentials for digital mobile radio communications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_9_1367/_p

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@ARTICLE{e76-c_9_1367,
author={Norio GOTO, Nobuyuki HAYAMA, Hideki TAKAHASHI, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications},
year={1993},
volume={E76-C},
number={9},
pages={1367-1372},
abstract={This paper describes the performance of AlGaAs/GaAs HBT's developed for power applications. Their applicability to power amplifiers used in digital mobile radio communications is examined through measurement and numerical simulation, considering both power capability and linearity. Power HBT's with carbon-doped base layers showed DC current gains over 90. A linear gain of 19.2 dB, a maximum output RF power of 32.5 dBm, and a power added efficiency of 56 percent were obtained at 950 MHz. Numerical simulations showed that the power efficiency of HBT amplifiers could be improved by using harmonic trap circuits. Intermodulation measurements showed that third-order distortions were at most 21 dBc level at the 1-dB gain compression point. RF spectrum simulations using π/4 shift QPSK modulation showed that side-band spectrum generation was less than 45 dBc level at points 50 kHz off of the carrier frequency. These properties indicate that the power handling capabilities and linearity of HBT amplifiers offer promising potentials for digital mobile radio communications.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1367
EP - 1372
AU - Norio GOTO
AU - Nobuyuki HAYAMA
AU - Hideki TAKAHASHI
AU - Kazuhiko HONJO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1993
AB - This paper describes the performance of AlGaAs/GaAs HBT's developed for power applications. Their applicability to power amplifiers used in digital mobile radio communications is examined through measurement and numerical simulation, considering both power capability and linearity. Power HBT's with carbon-doped base layers showed DC current gains over 90. A linear gain of 19.2 dB, a maximum output RF power of 32.5 dBm, and a power added efficiency of 56 percent were obtained at 950 MHz. Numerical simulations showed that the power efficiency of HBT amplifiers could be improved by using harmonic trap circuits. Intermodulation measurements showed that third-order distortions were at most 21 dBc level at the 1-dB gain compression point. RF spectrum simulations using π/4 shift QPSK modulation showed that side-band spectrum generation was less than 45 dBc level at points 50 kHz off of the carrier frequency. These properties indicate that the power handling capabilities and linearity of HBT amplifiers offer promising potentials for digital mobile radio communications.
ER -