Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon
Summary :
A simulation model for arsenic diffusion in polycrystalline silicon has been developed considering dynamic dopant clustering and polysilicon grain growth kinetics tightly coupled with dopant diffusion and segregation. It was assumed that the polysilicon layer consists of column-like grains surrounded by thin grain-boundaries, so that one dimensional description is permissible for dopant diffusion. The dynamic clustering model was introduced for describing arsenic activation in polysilicon grains, considering the solubility limit increase for arsenic in a polysilicon. For a grain-growth calculation, a previous formula was modified to include a local concentration dependence. The simulation results show that these effects are significant for a high dose implantation case.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.112-117
- Publication Date
- 1994/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
- Category
- Process Simulation
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Masami HANE, Shinya HASEGAWA, "Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 2, pp. 112-117, February 1994, doi: .
Abstract: A simulation model for arsenic diffusion in polycrystalline silicon has been developed considering dynamic dopant clustering and polysilicon grain growth kinetics tightly coupled with dopant diffusion and segregation. It was assumed that the polysilicon layer consists of column-like grains surrounded by thin grain-boundaries, so that one dimensional description is permissible for dopant diffusion. The dynamic clustering model was introduced for describing arsenic activation in polysilicon grains, considering the solubility limit increase for arsenic in a polysilicon. For a grain-growth calculation, a previous formula was modified to include a local concentration dependence. The simulation results show that these effects are significant for a high dose implantation case.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_112/_p
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@ARTICLE{e77-c_2_112,
author={Masami HANE, Shinya HASEGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon},
year={1994},
volume={E77-C},
number={2},
pages={112-117},
abstract={A simulation model for arsenic diffusion in polycrystalline silicon has been developed considering dynamic dopant clustering and polysilicon grain growth kinetics tightly coupled with dopant diffusion and segregation. It was assumed that the polysilicon layer consists of column-like grains surrounded by thin grain-boundaries, so that one dimensional description is permissible for dopant diffusion. The dynamic clustering model was introduced for describing arsenic activation in polysilicon grains, considering the solubility limit increase for arsenic in a polysilicon. For a grain-growth calculation, a previous formula was modified to include a local concentration dependence. The simulation results show that these effects are significant for a high dose implantation case.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 112
EP - 117
AU - Masami HANE
AU - Shinya HASEGAWA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - A simulation model for arsenic diffusion in polycrystalline silicon has been developed considering dynamic dopant clustering and polysilicon grain growth kinetics tightly coupled with dopant diffusion and segregation. It was assumed that the polysilicon layer consists of column-like grains surrounded by thin grain-boundaries, so that one dimensional description is permissible for dopant diffusion. The dynamic clustering model was introduced for describing arsenic activation in polysilicon grains, considering the solubility limit increase for arsenic in a polysilicon. For a grain-growth calculation, a previous formula was modified to include a local concentration dependence. The simulation results show that these effects are significant for a high dose implantation case.
ER -
English
