Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree

Hannes STIPPEL; Siegfried SELBERHERR

Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree

Hannes STIPPEL, Siegfried SELBERHERR

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A fully three-dimensional simulation tool for modeling the ion implantation in arbitrarily complex three-dimensional structures is described. The calculation is based on the Monte Carlo (MC) method. For MC simulations of realistic three-dimensional structures the key problem is the CPU-time consumption which is primarily caused by two facts. (1) A large number of ion trajectories (about 10⁷) has to be simulated to get results with reasonable low statistical noise. (2) The point location problem is very complex in the three-dimensional space. Solutions for these problems are given in this paper. To reduce the CPU-time for calculating the numerous ion trajectories a superposition method is applied. For the point location (geometry checks) different possibilities are presented. Advantages and disadvantages of the conventional intersection method and a newly introduced octree method are discussed. The octree method was found to be suited best for three-dimensional simulation. Using the octree the CPU-time required for the simulation of one ion trajectory could be reduced so that it only needs approximately the same time as the intersection method in the two-dimensional case. Additionally, the data structure of the octree simplifies the coupling of this simulation tool with topography simulators based on a cellular method. Simulation results for a three-dimensional trench structure are presented.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.118-123

Publication Date: 1994/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))

Category: Process Simulation

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Hannes STIPPEL, Siegfried SELBERHERR, "Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 2, pp. 118-123, February 1994, doi: .
Abstract: A fully three-dimensional simulation tool for modeling the ion implantation in arbitrarily complex three-dimensional structures is described. The calculation is based on the Monte Carlo (MC) method. For MC simulations of realistic three-dimensional structures the key problem is the CPU-time consumption which is primarily caused by two facts. (1) A large number of ion trajectories (about 10⁷) has to be simulated to get results with reasonable low statistical noise. (2) The point location problem is very complex in the three-dimensional space. Solutions for these problems are given in this paper. To reduce the CPU-time for calculating the numerous ion trajectories a superposition method is applied. For the point location (geometry checks) different possibilities are presented. Advantages and disadvantages of the conventional intersection method and a newly introduced octree method are discussed. The octree method was found to be suited best for three-dimensional simulation. Using the octree the CPU-time required for the simulation of one ion trajectory could be reduced so that it only needs approximately the same time as the intersection method in the two-dimensional case. Additionally, the data structure of the octree simplifies the coupling of this simulation tool with topography simulators based on a cellular method. Simulation results for a three-dimensional trench structure are presented.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_118/_p

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@ARTICLE{e77-c_2_118,
author={Hannes STIPPEL, Siegfried SELBERHERR, },
journal={IEICE TRANSACTIONS on Electronics},
title={Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree},
year={1994},
volume={E77-C},
number={2},
pages={118-123},
abstract={A fully three-dimensional simulation tool for modeling the ion implantation in arbitrarily complex three-dimensional structures is described. The calculation is based on the Monte Carlo (MC) method. For MC simulations of realistic three-dimensional structures the key problem is the CPU-time consumption which is primarily caused by two facts. (1) A large number of ion trajectories (about 10⁷) has to be simulated to get results with reasonable low statistical noise. (2) The point location problem is very complex in the three-dimensional space. Solutions for these problems are given in this paper. To reduce the CPU-time for calculating the numerous ion trajectories a superposition method is applied. For the point location (geometry checks) different possibilities are presented. Advantages and disadvantages of the conventional intersection method and a newly introduced octree method are discussed. The octree method was found to be suited best for three-dimensional simulation. Using the octree the CPU-time required for the simulation of one ion trajectory could be reduced so that it only needs approximately the same time as the intersection method in the two-dimensional case. Additionally, the data structure of the octree simplifies the coupling of this simulation tool with topography simulators based on a cellular method. Simulation results for a three-dimensional trench structure are presented.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree
T2 - IEICE TRANSACTIONS on Electronics
SP - 118
EP - 123
AU - Hannes STIPPEL
AU - Siegfried SELBERHERR
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - A fully three-dimensional simulation tool for modeling the ion implantation in arbitrarily complex three-dimensional structures is described. The calculation is based on the Monte Carlo (MC) method. For MC simulations of realistic three-dimensional structures the key problem is the CPU-time consumption which is primarily caused by two facts. (1) A large number of ion trajectories (about 10⁷) has to be simulated to get results with reasonable low statistical noise. (2) The point location problem is very complex in the three-dimensional space. Solutions for these problems are given in this paper. To reduce the CPU-time for calculating the numerous ion trajectories a superposition method is applied. For the point location (geometry checks) different possibilities are presented. Advantages and disadvantages of the conventional intersection method and a newly introduced octree method are discussed. The octree method was found to be suited best for three-dimensional simulation. Using the octree the CPU-time required for the simulation of one ion trajectory could be reduced so that it only needs approximately the same time as the intersection method in the two-dimensional case. Additionally, the data structure of the octree simplifies the coupling of this simulation tool with topography simulators based on a cellular method. Simulation results for a three-dimensional trench structure are presented.
ER -