A non-Local Formulation of Impact Ionization for Silicon

Paul G. SCROBOHACI; Ting-wei TANG

A non-Local Formulation of Impact Ionization for Silicon

Paul G. SCROBOHACI, Ting-wei TANG

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Impact ionization () in two n⁺-n^--n⁺ device structures is investigated. Data obtained from self-consistent Monte-Carlo (SCMC) simulations of the devices is used to show that the average energy () of only those high energy electrons contributing to is an appropriate variable for the modeling of . A transport model allowing one to calculate is derived from the Boltzmann transport equation (BTE) and calibrated by the SCMC simulation results. The values of and the coefficient, α_ii, predicted by the proposed model are in good agreement with the Monte-Carlo data.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.134-138

Publication Date: 1994/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))

Category: Device Modeling

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Paul G. SCROBOHACI, Ting-wei TANG, "A non-Local Formulation of Impact Ionization for Silicon" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 2, pp. 134-138, February 1994, doi: .
Abstract: Impact ionization () in two n⁺-n^--n⁺ device structures is investigated. Data obtained from self-consistent Monte-Carlo (SCMC) simulations of the devices is used to show that the average energy () of only those high energy electrons contributing to is an appropriate variable for the modeling of . A transport model allowing one to calculate is derived from the Boltzmann transport equation (BTE) and calibrated by the SCMC simulation results. The values of and the coefficient, α_ii, predicted by the proposed model are in good agreement with the Monte-Carlo data.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_134/_p

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@ARTICLE{e77-c_2_134,
author={Paul G. SCROBOHACI, Ting-wei TANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A non-Local Formulation of Impact Ionization for Silicon},
year={1994},
volume={E77-C},
number={2},
pages={134-138},
abstract={Impact ionization () in two n⁺-n^--n⁺ device structures is investigated. Data obtained from self-consistent Monte-Carlo (SCMC) simulations of the devices is used to show that the average energy () of only those high energy electrons contributing to is an appropriate variable for the modeling of . A transport model allowing one to calculate is derived from the Boltzmann transport equation (BTE) and calibrated by the SCMC simulation results. The values of and the coefficient, α_ii, predicted by the proposed model are in good agreement with the Monte-Carlo data.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - A non-Local Formulation of Impact Ionization for Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 134
EP - 138
AU - Paul G. SCROBOHACI
AU - Ting-wei TANG
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - Impact ionization () in two n⁺-n^--n⁺ device structures is investigated. Data obtained from self-consistent Monte-Carlo (SCMC) simulations of the devices is used to show that the average energy () of only those high energy electrons contributing to is an appropriate variable for the modeling of . A transport model allowing one to calculate is derived from the Boltzmann transport equation (BTE) and calibrated by the SCMC simulation results. The values of and the coefficient, α_ii, predicted by the proposed model are in good agreement with the Monte-Carlo data.
ER -