1-2hit |
Paul G. SCROBOHACI Ting-wei TANG
Impact ionization () in two n+-n--n+ device structures is investigated. Data obtained from self-consistent Monte-Carlo (SCMC) simulations of the devices is used to show that the average energy (
A Monte Carlo calculation is performed to examine the transport coefficients of the electron gas under an inhomogeneous electric field. The expressions constructed from the M. C. results are then incorporated into the hydrodynamic formulation to calculate the internal characteristics of a silicon BJT device. The calculated results agree well with the Monte Carlo prediction.