An Integrated Efficient Method for Deep-Submicron EPROM/Flash Device Simulation Using Energy Transport Model
Summary :
An efficient method which integrates a 2-D energy transport model, impact ionization model, gate current model, a discretized gate-capacitor EPROM model, and a post-processing quasi-transient programming/erase method, was developed for deep-submicron EPROM/Flash device simulation. The predicted results showed on the average better than 90% accuracy, and it took only few minutes CPU time on a SUN/SPARC2 to generate EPROM/Flash Vt shift curves.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.166-173
- Publication Date
- 1994/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
- Category
- Device Simulation
Authors
Keyword
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Jack Zezhong PENG, Steve LONGCOR, Jeffrey FREY, "An Integrated Efficient Method for Deep-Submicron EPROM/Flash Device Simulation Using Energy Transport Model" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 2, pp. 166-173, February 1994, doi: .
Abstract: An efficient method which integrates a 2-D energy transport model, impact ionization model, gate current model, a discretized gate-capacitor EPROM model, and a post-processing quasi-transient programming/erase method, was developed for deep-submicron EPROM/Flash device simulation. The predicted results showed on the average better than 90% accuracy, and it took only few minutes CPU time on a SUN/SPARC2 to generate EPROM/Flash Vt shift curves.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_166/_p
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@ARTICLE{e77-c_2_166,
author={Jack Zezhong PENG, Steve LONGCOR, Jeffrey FREY, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Integrated Efficient Method for Deep-Submicron EPROM/Flash Device Simulation Using Energy Transport Model},
year={1994},
volume={E77-C},
number={2},
pages={166-173},
abstract={An efficient method which integrates a 2-D energy transport model, impact ionization model, gate current model, a discretized gate-capacitor EPROM model, and a post-processing quasi-transient programming/erase method, was developed for deep-submicron EPROM/Flash device simulation. The predicted results showed on the average better than 90% accuracy, and it took only few minutes CPU time on a SUN/SPARC2 to generate EPROM/Flash Vt shift curves.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - An Integrated Efficient Method for Deep-Submicron EPROM/Flash Device Simulation Using Energy Transport Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 166
EP - 173
AU - Jack Zezhong PENG
AU - Steve LONGCOR
AU - Jeffrey FREY
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - An efficient method which integrates a 2-D energy transport model, impact ionization model, gate current model, a discretized gate-capacitor EPROM model, and a post-processing quasi-transient programming/erase method, was developed for deep-submicron EPROM/Flash device simulation. The predicted results showed on the average better than 90% accuracy, and it took only few minutes CPU time on a SUN/SPARC2 to generate EPROM/Flash Vt shift curves.
ER -
English
