IEICE TRANSACTIONS on Electronics
Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs
Summary :
A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.187-193
- Publication Date
- 1994/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
- Category
- Device Simulation
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Shirun HO, Masaki OOHIRA, Osamu KAGAYA, Aya MORIYOSHI, Hiroshi MIZUTA, Ken YAMAGUCHI, "Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 2, pp. 187-193, February 1994, doi: .
Abstract: A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_187/_p
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@ARTICLE{e77-c_2_187,
author={Shirun HO, Masaki OOHIRA, Osamu KAGAYA, Aya MORIYOSHI, Hiroshi MIZUTA, Ken YAMAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs},
year={1994},
volume={E77-C},
number={2},
pages={187-193},
abstract={A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 187
EP - 193
AU - Shirun HO
AU - Masaki OOHIRA
AU - Osamu KAGAYA
AU - Aya MORIYOSHI
AU - Hiroshi MIZUTA
AU - Ken YAMAGUCHI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.
ER -
English
