Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations
Summary :
Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamic, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamic and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.227-235
- Publication Date
- 1994/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
- Category
- Numerics
Authors
Keyword
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N. R. ALURU, Kincho H. LAW, Peter M. PINSKY, Arthur RAEFSKY, Ronald J. G. GOOSSENS, Robert W. DUTTON, "Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 2, pp. 227-235, February 1994, doi: .
Abstract: Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamic, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamic and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_227/_p
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@ARTICLE{e77-c_2_227,
author={N. R. ALURU, Kincho H. LAW, Peter M. PINSKY, Arthur RAEFSKY, Ronald J. G. GOOSSENS, Robert W. DUTTON, },
journal={IEICE TRANSACTIONS on Electronics},
title={Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations},
year={1994},
volume={E77-C},
number={2},
pages={227-235},
abstract={Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamic, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamic and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations
T2 - IEICE TRANSACTIONS on Electronics
SP - 227
EP - 235
AU - N. R. ALURU
AU - Kincho H. LAW
AU - Peter M. PINSKY
AU - Arthur RAEFSKY
AU - Ronald J. G. GOOSSENS
AU - Robert W. DUTTON
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamic, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamic and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.
ER -
English
