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The precision of magnetic field calculation is crucial to predict the arc behavior using magnetohydrodynamic (MHD) model. A integrated calculation method is proposed to couple the calculation of magnetic field and fluid dynamics based on the commercial software ANSYS and FLUENT, which especially benefits to take into account the existence of the ferromagnetic parts. An example concerning air arc is presented using the method.
Matthias STECHER Bernd MEINERZHAGEN Ingo BORK Joachim M. J. KRÜCKEN Peter MAAS Walter L. ENGL
The consequences of energy transport related effects like velocity overshoot on the performance of bipolar transistors have already been studied previously. So far however most of the applied models were only 1D and it remained unclear whether such effects would have a significant influence on important quantities like ECL gate delay accessible only on the circuit level. To the authors' best knowledge in this paper for the first time the consequences of energy transport related effects on the circuit level are investigated in a rigorous manner by mixed level device/circuit simulation incorporating full 2D numerical hydrodynamic models on the device level.
N. R. ALURU Kincho H. LAW Peter M. PINSKY Arthur RAEFSKY Ronald J. G. GOOSSENS Robert W. DUTTON
Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamic, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamic and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.