Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations

Ernst STRASSER; Gerhard SCHROM; Karl WIMMER; Siegfried SELBERHERR

Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations

Ernst STRASSER, Gerhard SCHROM, Karl WIMMER, Siegfried SELBERHERR

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A new method for simulation of etching and deposition processes has been developed. This method is based on fundamental morphological operations derived from image and signal processing. As the material surface during simulation moves in time, the geometry either increases or decreases. If the simulation geometry is considered as a two-valued image (material or vacuum), etching and deposition processes can be simulated by means of the erosion and dilation operation. Together with a cellular material representation this method allows an accurate and stable simulation of three-dimensional arbitrary structures. Simulation results for several etching and deposition problems demonstrate accuracy and generality of our method.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.92-97

Publication Date: 1994/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))

Category: Process Simulation

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Ernst STRASSER, Gerhard SCHROM, Karl WIMMER, Siegfried SELBERHERR, "Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 2, pp. 92-97, February 1994, doi: .
Abstract: A new method for simulation of etching and deposition processes has been developed. This method is based on fundamental morphological operations derived from image and signal processing. As the material surface during simulation moves in time, the geometry either increases or decreases. If the simulation geometry is considered as a two-valued image (material or vacuum), etching and deposition processes can be simulated by means of the erosion and dilation operation. Together with a cellular material representation this method allows an accurate and stable simulation of three-dimensional arbitrary structures. Simulation results for several etching and deposition problems demonstrate accuracy and generality of our method.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_92/_p

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@ARTICLE{e77-c_2_92,
author={Ernst STRASSER, Gerhard SCHROM, Karl WIMMER, Siegfried SELBERHERR, },
journal={IEICE TRANSACTIONS on Electronics},
title={Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations},
year={1994},
volume={E77-C},
number={2},
pages={92-97},
abstract={A new method for simulation of etching and deposition processes has been developed. This method is based on fundamental morphological operations derived from image and signal processing. As the material surface during simulation moves in time, the geometry either increases or decreases. If the simulation geometry is considered as a two-valued image (material or vacuum), etching and deposition processes can be simulated by means of the erosion and dilation operation. Together with a cellular material representation this method allows an accurate and stable simulation of three-dimensional arbitrary structures. Simulation results for several etching and deposition problems demonstrate accuracy and generality of our method.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations
T2 - IEICE TRANSACTIONS on Electronics
SP - 92
EP - 97
AU - Ernst STRASSER
AU - Gerhard SCHROM
AU - Karl WIMMER
AU - Siegfried SELBERHERR
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - A new method for simulation of etching and deposition processes has been developed. This method is based on fundamental morphological operations derived from image and signal processing. As the material surface during simulation moves in time, the geometry either increases or decreases. If the simulation geometry is considered as a two-valued image (material or vacuum), etching and deposition processes can be simulated by means of the erosion and dilation operation. Together with a cellular material representation this method allows an accurate and stable simulation of three-dimensional arbitrary structures. Simulation results for several etching and deposition problems demonstrate accuracy and generality of our method.
ER -