C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO₂

Takashi OHZONE, Takashi HORI

Summary :

C-V and I-V characteristics of an n-MOSFET with Si-implanted gate-SiO₂ of 50 nm are analyzed by using a test device with large equal channel width and length of 100 µm, and discussed for realizing a large hysteresis window of threshold voltage. Interface trap densities change logarithmically from 310¹⁰ to 110¹²cm²eV¹ as the Si-dose at 25 keV increases from zero to 310¹⁶cm². Threshold-voltage changes caused by 25 keV implantaions are as high as 0.2 V. Effective mobilities (subthreshold swings) change from 600 (0.10) to 100 cm²/V・s (0.26 V/decade) as the Si-dose increases from 0 to 310¹⁶ cm² at 25 keV, and both parameters are related with the change of interface trap densities. There is a close relationship between the hysteresis windows of gate current and threshold voltage, and the largest threshold voltage window in a low gate voltage region is obtained for the MOSFET with Si-implantation at 25 keV/310¹⁶ cm².

• Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.6 pp.952-959
• Publication Date: 1994/06/25
• Type of Manuscript: PAPER
• Category: Integrated Electronics

Authors

Takashi OHZONE
Takashi HORI

Keyword

MOSFET,  Si-implantation,  EEPROM