Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires

Kenji HIRUMA; Hisaya MURAKOSHI; Masamitsu YAZAWA; Kensuke OGAWA; Satoru FUKUHARA; Masataka SHIRAI; Toshio KATSUYAMA

Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires

Kenji HIRUMA, Hisaya MURAKOSHI, Masamitsu YAZAWA, Kensuke OGAWA, Satoru FUKUHARA, Masataka SHIRAI, Toshio KATSUYAMA

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Ultrathin GaAs, AlGaAs and GaAs/InAs wire crystals (whiskers) as thin as 20-50 nm are grown by organometallic vapor phase epitaxy (OMVPE) using Au as a growth catalyst. It is found that the whisker shape and width can be controlled by adjusting the thickness of the Au deposited on the substrate surface and the substrate temperature duing OMVPE. A new technique employing a scanning tunneling microscope (STM) for controlling the whisker growth position on the substrate surface is described. Photoluminescence spectra from the GaAs whiskers show a blue shift of the luminescene peak energy as the whisker width decreases. The amount of blue shift energy is rather small compared to that calculated by a simple square potential well model. The discrepancy is explained by the cylindrical potential well model including the surface depletion effect. Atomic composition within the portion of 1-20 nm along the AlGaAs and GaAs/InAs whiskers has been analyzed by energy dispersive X-ray analysis in combination with transmission electron microscopy. This shows the exsitence of Au at the tip of the whisker and the composition change occurs over a length of less than 5 nm at the GaAs/InAs heterojunction.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1420-1425

Publication Date: 1994/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)

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Kenji HIRUMA, Hisaya MURAKOSHI, Masamitsu YAZAWA, Kensuke OGAWA, Satoru FUKUHARA, Masataka SHIRAI, Toshio KATSUYAMA, "Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 9, pp. 1420-1425, September 1994, doi: .
Abstract: Ultrathin GaAs, AlGaAs and GaAs/InAs wire crystals (whiskers) as thin as 20-50 nm are grown by organometallic vapor phase epitaxy (OMVPE) using Au as a growth catalyst. It is found that the whisker shape and width can be controlled by adjusting the thickness of the Au deposited on the substrate surface and the substrate temperature duing OMVPE. A new technique employing a scanning tunneling microscope (STM) for controlling the whisker growth position on the substrate surface is described. Photoluminescence spectra from the GaAs whiskers show a blue shift of the luminescene peak energy as the whisker width decreases. The amount of blue shift energy is rather small compared to that calculated by a simple square potential well model. The discrepancy is explained by the cylindrical potential well model including the surface depletion effect. Atomic composition within the portion of 1-20 nm along the AlGaAs and GaAs/InAs whiskers has been analyzed by energy dispersive X-ray analysis in combination with transmission electron microscopy. This shows the exsitence of Au at the tip of the whisker and the composition change occurs over a length of less than 5 nm at the GaAs/InAs heterojunction.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1420/_p

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@ARTICLE{e77-c_9_1420,
author={Kenji HIRUMA, Hisaya MURAKOSHI, Masamitsu YAZAWA, Kensuke OGAWA, Satoru FUKUHARA, Masataka SHIRAI, Toshio KATSUYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires},
year={1994},
volume={E77-C},
number={9},
pages={1420-1425},
abstract={Ultrathin GaAs, AlGaAs and GaAs/InAs wire crystals (whiskers) as thin as 20-50 nm are grown by organometallic vapor phase epitaxy (OMVPE) using Au as a growth catalyst. It is found that the whisker shape and width can be controlled by adjusting the thickness of the Au deposited on the substrate surface and the substrate temperature duing OMVPE. A new technique employing a scanning tunneling microscope (STM) for controlling the whisker growth position on the substrate surface is described. Photoluminescence spectra from the GaAs whiskers show a blue shift of the luminescene peak energy as the whisker width decreases. The amount of blue shift energy is rather small compared to that calculated by a simple square potential well model. The discrepancy is explained by the cylindrical potential well model including the surface depletion effect. Atomic composition within the portion of 1-20 nm along the AlGaAs and GaAs/InAs whiskers has been analyzed by energy dispersive X-ray analysis in combination with transmission electron microscopy. This shows the exsitence of Au at the tip of the whisker and the composition change occurs over a length of less than 5 nm at the GaAs/InAs heterojunction.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires
T2 - IEICE TRANSACTIONS on Electronics
SP - 1420
EP - 1425
AU - Kenji HIRUMA
AU - Hisaya MURAKOSHI
AU - Masamitsu YAZAWA
AU - Kensuke OGAWA
AU - Satoru FUKUHARA
AU - Masataka SHIRAI
AU - Toshio KATSUYAMA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - Ultrathin GaAs, AlGaAs and GaAs/InAs wire crystals (whiskers) as thin as 20-50 nm are grown by organometallic vapor phase epitaxy (OMVPE) using Au as a growth catalyst. It is found that the whisker shape and width can be controlled by adjusting the thickness of the Au deposited on the substrate surface and the substrate temperature duing OMVPE. A new technique employing a scanning tunneling microscope (STM) for controlling the whisker growth position on the substrate surface is described. Photoluminescence spectra from the GaAs whiskers show a blue shift of the luminescene peak energy as the whisker width decreases. The amount of blue shift energy is rather small compared to that calculated by a simple square potential well model. The discrepancy is explained by the cylindrical potential well model including the surface depletion effect. Atomic composition within the portion of 1-20 nm along the AlGaAs and GaAs/InAs whiskers has been analyzed by energy dispersive X-ray analysis in combination with transmission electron microscopy. This shows the exsitence of Au at the tip of the whisker and the composition change occurs over a length of less than 5 nm at the GaAs/InAs heterojunction.
ER -