This paper describes 40-Gbit/s operation of 1.55-µm electro-absorption (EA) modulators applicable to compact and low-cost transmitters for very-short-reach (VSR) applications. We start by identifying factors that make a multi-quantum-well (MQW) design suitable for high levels of output power and for uncooled operation. From the basic experimental results, we determine that a valence-band discontinuity ΔEv at around 80 meV is optimal in terms of combining high-output-power operation and a good extinction ratio. We then apply the above findings in an InGaAsP-MQW EA modulator that is monolithically integrated with a distributed feedback (DFB) laser, and thus obtain operation with high output power (+1.2 dBm), a high ER (10.5 dB), and a low power penalty (0.4 dB after transmission over 2.6 km of single-mode-fiber). These results confirm the applicability of our EA modulator/DFB laser to VSR applications. After that, we theoretically demonstrate the superiority in terms of ER characteristics of the InGaAlAs-MQW over the conventional InGaAsP-MQW. InGaAlAs-MQW EA modulators are fabricated and demonstrate, for the first time, 40-Gbit/s operation over a wide temperature range (0 to 85).

Ultrathin GaAs, AlGaAs and GaAs/InAs wire crystals (whiskers) as thin as 20-50 nm are grown by organometallic vapor phase epitaxy (OMVPE) using Au as a growth catalyst. It is found that the whisker shape and width can be controlled by adjusting the thickness of the Au deposited on the substrate surface and the substrate temperature duing OMVPE. A new technique employing a scanning tunneling microscope (STM) for controlling the whisker growth position on the substrate surface is described. Photoluminescence spectra from the GaAs whiskers show a blue shift of the luminescene peak energy as the whisker width decreases. The amount of blue shift energy is rather small compared to that calculated by a simple square potential well model. The discrepancy is explained by the cylindrical potential well model including the surface depletion effect. Atomic composition within the portion of 1-20 nm along the AlGaAs and GaAs/InAs whiskers has been analyzed by energy dispersive X-ray analysis in combination with transmission electron microscopy. This shows the exsitence of Au at the tip of the whisker and the composition change occurs over a length of less than 5 nm at the GaAs/InAs heterojunction.

A GaAs/AlGaAs directional-coupler-type device that use polariton propagation was fabricated and its switching operation was demonstrated. The length of the switching region is as small as 300 µm. The output signal modulation under an electric field shows typical characteristics of directional-coupler type switching. The measured operation voltage is 2 V for an operation wavelength of 805 nm at 10 K. The corresponding signal extinction ratio is 8 dB. These experimental results confirm the efficient operation of the polariton devices, which can be applied to especially small optical -switching devices with low-voltage operation.

A GaAs/AlGaAs directional-coupler-type device that use polariton propagation was fabricated and its switching operation was demonstrated. The length of the switching region is as small as 300 µm. The output signal modulation under an electric field shows typical characteristics of directional-coupler type switching. The measured operation voltage is 2 V for an operation wavelength of 805 nm at 10 K. The corresponding signal extinction ratio is 8 dB. These experimental results confirm the efficient operation of the polariton devices, which can be applied to especially small optical -switching devices with low-voltage operation.

The direct measurement of sidewall roughness on a ridge-type GaAs waveguide was performed using an atomic force microscope (AFM) combined with a scanning electron microscope (SEM). The ridge sidewall of a GaAs waveguide formed by wet-etching and the ridge sidewall formed after regrowth of a 2.45-µm GaAs/AlGaAs epitaxial layer on the same waveguide were observed using introducing the technique for sample slanting. The observed power spectral density was used to determine the scattering loss caused by the sidewall roughness. It was found that the ridge-type GaAs waveguide for light wave transmission had a scattering loss of 0.029 dB/cm in the as-etched ridge state and a scattering loss of 0.17 dB/cm after regrowing the cover GaAs/AlGaAs epitaxial layer. A leaky GaAs/AlGaAs waveguide for polariton-quantum-wave trans-mission had a scattering loss of 1.3l0-5 dB/cm, which means that the scattering loss is negligible. Furthermore, it was found that a periodical surface fluctuation (spatial frequency 2.2 µm-1) along the waveguide appeared after the regrowth of the epitaxial layer. Thus, this method is useful for direct observation of sidewall roughness and can be used to quantitatively determine the sidewall scattering loss.